General purpose NPN transistor LRC L2SA812RLT1G with 50 volt collector emitter voltage and SOT 23 package
Key Attributes
Model Number:
L2SA812RLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
180MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L2SA812RLT1G
Package:
SOT-23
Product Description
Product Overview
The L2SA812 is a general-purpose NPN epitaxial planar transistor designed for high voltage applications, featuring a VCEO of -50V. It is suitable for various electronic circuits and has an NPN complement, the L2SC1623. The 'S-' prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Series: L2SA812QLT1G Series, S-L2SA812QLT1G Series
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified (for S- prefix), RoHS compliant
- Material Compliance: RoHS requirements
Technical Specifications
| Symbol | Characteristic | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| VCEO | Collector-Emitter Voltage | -50 | V | |||
| VCBO | Collector-Base Voltage | -60 | V | |||
| VEBO | Emitter-Base Voltage | -6 | V | |||
| IC | Collector current-continuous | -150 | mAdc | |||
| PD | Total Device Dissipation (FR-5 Board) | 200 | mW | TA=25C | ||
| RJA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | |||
| PD | Total Device Dissipation (Alumina Substrate) | 200 | mW | TA=25C | ||
| RJA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | |||
| Tj ,Tstg | Junction and Storage Temperature | -55 | +150 | C | ||
| hFE | DC Current Gain | 120 | 560 | IC=-1mA,VCE=-6.0V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.3 | V | IC=-100mA,IB=-10mA | ||
| VBE | Base-Emitter On Voltage | -0.58 | -0.68 | V | IE=-1.0mA,VCE=-6.0V | |
| Ft | Current-Gain-Bandwidth Product | 180 | MHz | VCE=-6.0V,IE =-10mA | ||
| Cobo | Output Capacitance | 4.5 | pF | VCE = -10V, IE=0, f=1.0MHz | ||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | -50 | V | IC=-1mA | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | -6 | V | IE=-50 | ||
| V(BR)CBO | Collector-Base Breakdown Voltage | -60 | V | IC=-50 A | ||
| ICBO | Collector Cutoff Current | -0.1 | A | VCB=-50V | ||
| IEBO | Emitter Cutoff Current | -0.1 | A | VBE=-6V |
2304140030_LRC-L2SA812RLT1G_C129117.pdf
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