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quality NPN and PNP Silicon Dual Bias Resistor Transistors with Monolithic Bias Network LRC LMUN5335DW1T1G factory
quality NPN and PNP Silicon Dual Bias Resistor Transistors with Monolithic Bias Network LRC LMUN5335DW1T1G factory

NPN and PNP Silicon Dual Bias Resistor Transistors with Monolithic Bias Network LRC LMUN5335DW1T1G

Key Attributes
Model Number: LMUN5335DW1T1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.86kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN5335DW1T1G
Package:
SOT-363
Product Description

Dual Bias Resistor Transistors - NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Product Overview

The LMUN5311DW1T1G series offers Dual Bias Resistor Transistors (BRTs) in a SOT-363/SC-88 package, designed for low power surface mount applications where board space is limited. Each BRT integrates a single transistor with a monolithic bias network, comprising a series base resistor and a base-emitter resistor. This integration eliminates the need for external components, simplifying circuit design, reducing board space, and lowering component count. The series features both NPN and PNP silicon transistors with a monolithic bias resistor network, ideal for replacing discrete devices and their associated bias networks.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SOT-363/SC-88
  • Material Compliance: RoHS

Technical Specifications

Model Package R1 (k) R2 (k) Shipping Device Marking
LMUN5311DW1T1G SOT-363 11 10 3000/Tape&Reel 11
LMUN5311DW1T3G SOT-363 11 10 10000/Tape&Reel 11
LMUN5312DW1T1G SOT-363 12 22 3000/Tape&Reel 12
LMUN5312DW1T3G SOT-363 12 22 10000/Tape&Reel 12
LMUN5313DW1T1G SOT-363 13 47 3000/Tape&Reel 13
LMUN5313DW1T3G SOT-363 13 47 10000/Tape&Reel 13
LMUN5314DW1T1G SOT-363 14 10 47 3000/Tape&Reel 14
LMUN5314DW1T3G SOT-363 14 10 47 10000/Tape&Reel 14
LMUN5315DW1T1G SOT-363 15 10 3000/Tape&Reel 15
LMUN5315DW1T3G SOT-363 15 10 10000/Tape&Reel 15
LMUN5316DW1T1G SOT-363 16 4.7 3000/Tape&Reel 16
LMUN5316DW1T3G SOT-363 16 4.7 10000/Tape&Reel 16
LMUN5330DW1T1G SOT-363 30 1 1 3000/Tape&Reel 30
LMUN5330DW1T3G SOT-363 30 1 1 10000/Tape&Reel 30
LMUN5331DW1T1G SOT-363 31 2.2 2.2 3000/Tape&Reel 31
LMUN5331DW1T3G SOT-363 31 2.2 2.2 10000/Tape&Reel 31
LMUN5332DW1T1G SOT-363 32 4.7 4.7 3000/Tape&Reel 32
LMUN5332DW1T3G SOT-363 32 4.7 4.7 10000/Tape&Reel 32
LMUN5333DW1T1G SOT-363 33 4.7 47 3000/Tape&Reel 33
LMUN5333DW1T3G SOT-363 33 4.7 47 10000/Tape&Reel 33
LMUN5334DW1T1G SOT-363 34 22 47 3000/Tape&Reel 34
LMUN5334DW1T3G SOT-363 34 22 47 10000/Tape&Reel 34
LMUN5335DW1T1G SOT-363 35 2.2 47 3000/Tape&Reel 35
LMUN5335DW1T3G SOT-363 35 2.2 47 10000/Tape&Reel 35
Characteristic Symbol Value Unit Notes
Collector-Base Voltage VCBO 50 Vdc Common for Q1 and Q2
Collector-Emitter Voltage VCEO 50 Vdc Common for Q1 and Q2
Collector Current IC 100 mAdc Common for Q1 and Q2
Total Device Dissipation (One Junction Heated) PD 187 mW TA= 25C, Note 1
Derate above 25C (One Junction Heated) 2.0 mW/C Note 1
Thermal Resistance Junction-to-Ambient (One Junction Heated) RJA 670 C/W Note 1
Total Device Dissipation (Both Junctions Heated) PD 250 mW TA= 25C, Note 1
Derate above 25C (Both Junctions Heated) 2.0 mW/C Note 1
Thermal Resistance Junction-to-Ambient (Both Junctions Heated) RJA 493 C/W Note 1
Thermal Resistance Junction-to-Lead RJL 188 C/W Note 1
Junction and Storage Temperature TJ, Tstg -55 to +150 C
Collector-Base Cutoff Current ICBO 100 nAdc VCB= 50 V, IE= 0
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE= 50 V, IB= 0
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC= 10 A, IE= 0
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc Note 3, IC= 2.0 mA, IB= 0

Notes:

  • 1. FR4 @ Minimum Pad
  • 2. FR4 @ 1.0 x 1.0 inch Pad
  • 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%

1806121633_LRC-LMUN5335DW1T1G_C172431.pdf

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