Littelfuse IXYS DPG30I300PA Fast Recovery Diode with Planar Passivated Chips and Low Leakage Current

Key Attributes
Model Number: DPG30I300PA
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
360A
Reverse Leakage Current (Ir):
1uA@300V
Reverse Recovery Time (trr):
35ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
300V
Pd - Power Dissipation:
175W
Voltage - Forward(Vf@If):
1.66V@60A
Current - Rectified:
30A
Mfr. Part #:
DPG30I300PA
Package:
TO-220AC-2
Product Description

DPG30I300PA: Low Loss and Soft Recovery High Performance Fast Recovery Diode

Product Overview

The DPG30I300PA is a single HiPerFRED fast recovery diode designed for high-performance applications. It features planar passivated chips with very low leakage current and very short recovery times, contributing to improved thermal behavior and very low Irm-values. The soft reverse recovery characteristic minimizes EMI/RFI, while low Irm reduces power dissipation and turn-on losses in commutating switches. This diode is ideal as an antiparallel diode for high-frequency switching devices, antisaturation diode, snubber diode, and freewheeling diode in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: TO-220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0

Technical Specifications

Symbol Definition Conditions Unit typ. max. min.
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 300
VRSM max. non-repetitive reverse blocking voltage TVJ = 25C V 300
IF(AV) average forward current TC = 25C A 30
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 360
Ptot total power dissipation TC = 25C W 175
VF forward voltage drop IF = 30 A; TVJ = 25C V 1.35 1.66
VF0 threshold voltage IF = 30 A; TVJ = 175C V 0.70
IR reverse current, drain current VR = 200 V; TVJ = 25C A 150
IR reverse current, drain current VR = 200 V; TVJ = 125C mA 0.1
RthJC thermal resistance junction to case K/W 0.85 1.08
RthCH thermal resistance case to heatsink K/W 0.50
trr reverse recovery time IF = 30 A; -dIF/dt = 200 A/s; VR = 200 V; TVJ = 125C ns 35 55
IRM max. reverse recovery current IF = 30 A; -dIF/dt = 200 A/s; VR = 200 V; TVJ = 125C A 7
Qrr reverse recovery charge IF = 30 A; -dIF/dt = 200 A/s; VR = 200 V; TVJ = 125C C
Erec recovery energy IF = 30 A; -dIF/dt = 200 A/s; VR = 200 V; TVJ = 125C J
CJ junction capacitance VR = 150 V; f = 1 MHz; TVJ = 25C pF 42
TVJ virtual junction temperature C 175 -55
Tstg storage temperature C 150 -55
Weight g 2.3

Product Dimensions (TO-220)

Dim. Millimeter Inches
A 4.32 - 4.82 0.170 - 0.190
A1 1.14 - 1.39 0.045 - 0.055
A2 2.29 - 2.79 0.090 - 0.110
b 0.64 - 1.01 0.025 - 0.040
b2 1.15 - 1.65 0.045 - 0.065
C 0.35 - 0.56 0.014 - 0.022
D 14.73 - 16.00 0.580 - 0.630
E 9.91 - 10.66 0.390 - 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 - 6.85 0.230 - 0.270
L 12.70 - 13.97 0.500 - 0.550
L1 2.79 - 5.84 0.110 - 0.230
P 3.54 - 4.08 0.139 - 0.161
Q 2.54 - 3.18 0.100 - 0.125

2410121742_Littelfuse-IXYS-DPG30I300PA_C461304.pdf

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