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quality Littelfuse IXYS DSA50C100QB Schottky diode in industry standard TO-3P package for power electronics factory
quality Littelfuse IXYS DSA50C100QB Schottky diode in industry standard TO-3P package for power electronics factory

Littelfuse IXYS DSA50C100QB Schottky diode in industry standard TO-3P package for power electronics

Key Attributes
Model Number: DSA50C100QB
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
440A
Reverse Leakage Current (Ir):
450uA@100V
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
1.07V@50A
Current - Rectified:
25A
Mfr. Part #:
DSA50C100QB
Package:
TO-3P-3
Product Description

Product Overview

The DSA50C100QB is a high-performance Schottky diode featuring common cathode configuration. It offers very low forward voltage drop (Vf), extremely low switching losses, and low reverse recovery current (Irm) values, contributing to improved thermal behavior and high reliability in circuit operation. This diode is designed to reduce voltage peaks, enabling simpler protection circuits and low noise switching. It is ideal for use as rectifiers in switch mode power supplies (SMPS) and as free-wheeling diodes in low voltage converters.

Product Attributes

  • Brand: IXYS
  • Package: TO-3P (Industry standard outline compatible with TO-247)
  • Compliance: RoHS compliant
  • Material: Epoxy meets UL 94V-0

Technical Specifications

Symbol Definition Conditions min. typ. max. Unit
VRRM max. repetitive reverse blocking voltage TJ = 25C 100 V
VRSM max. non-repetitive reverse blocking voltage TJ = 25C 450 V
IF(AV) average forward current TC = 25C 50 A
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TJ = 45C 100 A
VF0 threshold voltage TJ = 175C 0.45 V
rF slope resistance for power loss calculation only TJ = 175C 0.72 m
VF forward voltage drop IF = 50 A; TJ = 25C 0.90 V
VF forward voltage drop IF = 50 A; TJ = 175C 1.07 V
IR reverse current, drain current VR = 100 V; TJ = 25C 125 A
IR reverse current, drain current VR = 100 V; TJ = 175C 5 mA
CJ junction capacitance VR = 12 V; f = 1 MHz 289 pF
Ptot total power dissipation TC = 25C 160 W
RthJC thermal resistance junction to case 0.25 K/W
RthCH thermal resistance case to heatsink 0.90 K/W
Tstg storage temperature -55 150 C
Tvj virtual junction temperature -55 175 C
Weight TO-3P 5 g
Mounting torque 1.2 Nm
Mounting force with clip 120 N

2409300703_Littelfuse-IXYS-DSA50C100QB_C499434.pdf

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