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quality Littelfuse IXYS DNA30E2200PA high voltage rectifier single diode 30 amp TO220 package low leakage current factory
quality Littelfuse IXYS DNA30E2200PA high voltage rectifier single diode 30 amp TO220 package low leakage current factory

Littelfuse IXYS DNA30E2200PA high voltage rectifier single diode 30 amp TO220 package low leakage current

Key Attributes
Model Number: DNA30E2200PA
Product Custom Attributes
Voltage - DC Reverse (Vr) (Max):
2.2kV
Voltage - Forward(Vf@If):
1.26V@30A
Mfr. Part #:
DNA30E2200PA
Package:
TO-220AC
Product Description

Product Overview

The DNA30E2200PA is a high-voltage standard rectifier featuring a single diode in a TO-220 package. It is designed with planar passivated chips, offering very low leakage current and a low forward voltage drop with improved thermal behavior. This diode is suitable for main rectification and can be used in single and three-phase bridge configurations. The product is RoHS compliant and its epoxy meets UL 94V-0 standards.

Product Attributes

  • Brand: IXYS
  • Package: TO-220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Chip Technology: Planar passivated

Technical Specifications

Part Number Description Reverse Voltage (VRRM) Forward Current (IF(AV)) Package Type Features
DNA30E2200PA Single Diode High Voltage Standard Rectifier 2200 V 30 A TO-220 Very low leakage current, Very low forward voltage drop, Improved thermal behaviour
DNA30E2200PA Diode High Voltage Standard Rectifier (>= 2000V) 2200 V 30 A TO-220AC Single Diode
Symbol Definition Conditions Min. Typ. Max. Unit
VRRM max. repetitive reverse blocking voltage VJ T = 25C 2200 V
IF(AV) average forward current Rectifier 30 A
IFSM max. forward surge current t = 10 ms; (50 Hz), sine 495 A
It value for fusing t = 8,3 ms; (60 Hz), sine 370 As
VF forward voltage drop IF = 30 A 1.24 1.26 V
IR reverse current VR = 2200 V 150 A
CJ junction capacitance VJ = 10 V; R = 0 V; f = 1 MHz 140 pF
thJC thermal resistance junction to case 0.7 K/W
thCH thermal resistance case to heatsink 0.5 K/W
Ptot total power dissipation T = 25C 210 W
Tj virtual junction temperature -55 175 C
Tstg storage temperature -55 150 C
Dimension Millimeter (Min.) Millimeter (Max.) Inches (Min.) Inches (Max.)
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 5.08 BSC 0.200 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
P 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

2412091006_Littelfuse-IXYS-DNA30E2200PA_C5353842.pdf

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