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quality General purpose electronic transistor LRC S-LBC817-40LT1G NPN silicon type for circuit applications factory
quality General purpose electronic transistor LRC S-LBC817-40LT1G NPN silicon type for circuit applications factory

General purpose electronic transistor LRC S-LBC817-40LT1G NPN silicon type for circuit applications

Key Attributes
Model Number: S-LBC817-40LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S-LBC817-40LT1G
Package:
SOT-23
Product Description

General Purpose Transistors

The LBC817 series are NPN silicon transistors designed for general-purpose applications. They are available in various configurations and are suitable for a wide range of electronic circuits.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)
  • Compliance: RoHS requirements

Technical Specifications

nA V V pF
Characteristic Symbol LBC817-16 LBC817-25 LBC817-40 Unit Conditions
MAXIMUM RATINGS
CollectorEmitter Voltage V CEO 45 45 45 V
CollectorBase Voltage V CBO 50 50 50 V
EmitterBase Voltage V EBO 5.0 5.0 5.0 V
Collector Current Continuous I C 500 500 500 mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR5 Board) P D 225 225 225 mW TA = 25C, Derate above 25C: 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR5 Board) R JA 556 556 556 C/W
Total Device Dissipation (Alumina Substrate) P D 300 300 300 mW TA = 25C, Derate above 25C: 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate) R JA 417 417 417 C/W
Junction and Storage Temperature T J , T stg 55 to +150 C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
CollectorEmitter Breakdown Voltage V (BR)CEO 45 45 45 V IC = 10 mA
CollectorEmitter Breakdown Voltage V (BR)CES 50 50 50 V VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage V (BR)EBO 5.0 5.0 5.0 V IE = 1.0 A
Collector Cutoff Current I CBO 100 VCB = 20 V
Collector Cutoff Current I CBO 5.0 A VCB = 20 V, TA = 150C
ON CHARACTERISTICS
DC Current Gain h FE 100250 160400 250600 IC = 100 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage V CE(sat) 0.7 IC = 500 mA, IB = 50 mA
BaseEmitter On Voltage V BE(on) 1.2 IC = 500 mA, V CE = 1.0 V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product f T 100 100 100 MHz IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance C obo 10 VCB = 10 V, f = 1.0 MHz

Device Marking

  • LBC81716LT1G: 6A
  • LBC81725LT1G: 6B
  • LBC81740LT1G: 6C

Ordering Information

Device Marking Shipping Part Number
6A 3000/Tape&Reel LBC817-16LT1G
6A 10000/Tape&Reel LBC817-16LT3G
6B 3000/Tape&Reel LBC817-25LT1G
6B 10000/Tape&Reel LBC817-25LT3G
6C 3000/Tape&Reel LBC817-40LT1G
6C 10000/Tape&Reel LBC817-40LT3G
6A 3000/Tape&Reel S-LBC817-16LT1G
6B 3000/Tape&Reel S-LBC817-25LT1G
6C 3000/Tape&Reel S-LBC817-40LT1G

2010222107_LRC-S-LBC817-40LT1G_C883193.pdf

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