High reliability 650V 100A IGBT Luxin-semi YGQ100N65FP with easy parallel switching and rugged design
Key Attributes
Model Number:
YGQ100N65FP
Product Custom Attributes
Pd - Power Dissipation:
500W
Td(off):
250ns
Td(on):
75ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
8pF
Input Capacitance(Cies):
5.67nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.6V@250uA
Gate Charge(Qg):
135nC@15V
Operating Temperature:
-40℃~+175℃
Output Capacitance(Coes):
370pF
Reverse Recovery Time(trr):
50ns
Switching Energy(Eoff):
3.5mJ
Turn-On Energy (Eon):
4mJ
Mfr. Part #:
YGQ100N65FP
Package:
TO-247
Product Description
Product Overview
The YGQ100N65FP is a 650V / 100A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding applications.
Product Attributes
- Brand: LU-Semi
- Product Code: YGQ100N65FP
- Packaging: TO247-PLUS Tube
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |
| DC Collector Current | IC | 100 | A | TC = 100C |
| Diode Forward Current | IF | 75 | A | TC = 100C |
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |
| Short Circuit Withstand Time | TSC | 5 | s | VGE= 15V, VCE 400V |
| Power Dissipation | Ptot | 500 | W | Tj=25C |
| Operating Junction Temperature | Tj | -40+175 | C | |
| Storage Temperature | TS | -55+175 | C | |
| IGBT Thermal Resistance, Junction-Case | R(j-c) | 0.25 | K/W | |
| Diode Thermal Resistance, Junction-Case | R(j-c) | 0.4 | K/W | |
| Thermal Resistance, Junction-Ambient | R(j-a) | 40 | K/W | |
| Gate Threshold Voltage | VGE(th) | 4.8 | V | VGE=VCE, IC=250uA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.0 | V | VGE=15V, IC=100A, Tj = 175C |
| Zero Gate Voltage Collector Current | ICES | 0.5 | mA | VCE = 650V, VGE = 0V, Tj = 175C |
| Gate-Emitter Leakage Current | IGES | 100 | nA | VCE = 0V, VGE = 20V |
| Transconductance | gfs | 35 | S | VCE = 20V, IC = 100A |
| Input Capacitance | Cies | 5670 | pF | VCE = 25V, VGE = 0V, f = 1MHz |
| Output Capacitance | Coes | 370 | pF | |
| Reverse Transfer Capacitance | Cres | 8 | pF | |
| Gate Charge | QG | 135 | nC | VCC = 520V, IC = 100A, VGE = 15V |
| Short Circuit Collector Current | ICSC | 640 | A | VGE=15V,tSC5us, VCC=400V, Tjstart=25C |
| Turn-on Delay Time | td(on) | 75 | ns | VCC = 400V, IC =100.0A, VGE = 0.0/15.0V, Rg=10 |
| Rise Time | tr | 130 | ns | |
| Turn-off Delay Time | td(off) | 250 | ns | |
| Fall Time | tf | 125 | ns | |
| Turn-on Energy | Eon | 4.0 | mJ | |
| Turn-off Energy | Eoff | 3.5 | mJ | |
| Diode Forward Voltage | VFM | 2.1 | V | IF = 100A |
| Reverse Recovery Time | Trr | 50 | ns | IF= 100A,VR=400V, di/dt= 850A/s |
| Reverse Recovery Current | Irr | 22 | A | |
| Reverse Recovery Charge | Qrr | 700 | nC |
2410121516_luxin-semi-YGQ100N65FP_C4153748.pdf
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