Low noise PNP silicon transistor LRC LMBT5087LT1G in SOT23 package for general purpose applications
Key Attributes
Model Number:
LMBT5087LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
40MHz
Type:
PNP
Current - Collector(Ic):
50mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5087LT1G
Package:
SOT-23
Product Description
Product Overview
The LMBT5087LT1G is a low-noise PNP silicon transistor in a SOT-23 (TO-236AB) package. It is designed for general-purpose applications requiring low noise characteristics.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Device Marking: 2Q
- Certifications: RoHS compliant
Technical Specifications
| Characteristic | Symbol | Value | Unit | Notes |
| Maximum Ratings | V CEO | 50 | Vdc | |
| V CBO | 50 | Vdc | ||
| V EBO | 3.0 | Vdc | ||
| Collector Current Continuous | I C | 50 | mAdc | |
| Total Device Dissipation | P D | 225 | mW | RF-5 Board, T A =25 C |
| Derate above 25C | 1.8 | mW/C | ||
| Thermal Resistance, Junction to Ambient | R JA | 556 | C/W | RF-5 Board |
| R JA | 417 | C/W | Alumina Substrate | |
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | |
| OFF CHARACTERISTICS | ||||
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 50 | Vdc | (I C = 1.0 mAdc, I B = 0) |
| CollectorBase Breakdown Voltage | V (BR)CBO | 50 | Vdc | (I C = 100 Adc, I E = 0) |
| Collector Cutoff Current | I CBO | 10 | nAdc | (V CB = 10 Vdc, I E= 0) |
| I CBO | 50 | nAdc | (V CB = 35 Vdc, I E= 0) | |
| ON CHARACTERISTICS | ||||
| DC Current Gain | h FE | 250 800 | (I C = 100Adc, V CE = 5.0 Vdc) | |
| h FE | 250 | (I C = 1.0 mAdc, V CE = 5.0 Vdc) | ||
| h FE | 250 | (I C = 10 mAdc, V CE = 5.0 Vdc) | ||
| CollectorEmitter Saturation Voltage | V CE(sat) | 0.3 | Vdc | (I C = 10 mAdc, I B = 1.0 mAdc) |
| BaseEmitter Saturation Voltage | V BE(sat) | 0.85 | Vdc | (I C = 10 mAdc, I B = 1.0 mAdc) |
| SMALLSIGNAL CHARACTERISTICS | ||||
| CurrentGain Bandwidth Product | f T | 40 | MHz | (I C = 500 Adc, V CE= 5.0 Vdc, f = 20 MHz) |
| Output Capacitance | C obo | 4.0 | pF | (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) |
| SmallSignal Current Gain | h fe | 250 900 | (I C= 1.0mAdc, V CE = 5.0Vdc, f = 1.0 kHz) | |
| Noise Figure | N F | 2.0 | dB | (I C = 20 mAdc, V CE= 5.0 Vdc,Rs=10k, f = 1.0 kHz) |
| N F | 2.0 | dB | (I C = 100Adc, V CE= 5.0 Vdc,Rs=3.0k, f = 1.0 kHz) | |
2212131909_LRC-LMBT5087LT1G_C5273113.pdf
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