NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and Switching Solutions
Key Attributes
Model Number:
LBC847AWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC847AWT1G
Package:
SC-70
Product Description
LESHAN RADIO COMPANY, LTD. - General Purpose NPN Silicon Transistors
This document details the specifications for LESHAN RADIO COMPANY, LTD.'s general-purpose NPN silicon transistors, including the BC846, BC847, and BC848 series. These transistors are designed for a wide range of electronic applications requiring reliable amplification and switching capabilities.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)
Technical Specifications
| Model | Collector-Emitter Voltage (V CEO) | Collector-Base Voltage (V CBO) | Emitter-Base Voltage (V EBO) | Collector Current - Continuous (I C) | Total Device Dissipation (P D) | Thermal Resistance, Junction to Ambient (R JA) | Junction and Storage Temperature (T J, T stg) | Collector Cutoff Current (I CBO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (V CE(sat)) | Base-Emitter Saturation Voltage (V BE(sat)) | Base-Emitter Voltage (V BE(on)) | Current-Gain Bandwidth Product (f T) | Output Capacitance (C obo) | Noise Figure (NF) |
| BC846 | 65 V | 80 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 110-180 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 580-700 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
| BC847 | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 220-450 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 660-770 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
| BC848 | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 420-800 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 700 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
| S-BC846 | 65 V | 80 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 110-180 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 580-700 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
| S-BC847 | 45 V | 50 V | 6.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 220-450 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 660-770 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
| S-BC848 | 30 V | 30 V | 5.0 V | 100 mAdc | 150 mW | 833 C/W | 55 to +150 C | 15 nA (VCB = 30 V) | 420-800 (IC=2.0mA, VCE=5V) | 0.25 V (IC=10mA, IB=0.5mA) | 0.7 V (IC=10mA, IB=0.5mA) | 700 mV (IC=2.0mA, VCE=5V) | 100 MHz (IC=10mA, VCE=5V, f=100MHz) | 4.5 pF (VCB=10V, f=1.0MHz) | 4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz) |
Device Marking: LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
Ordering Information:
| Device | Package | Shipping |
| LBC846AWT1G | SC-70 | 3000/Tape&Reel |
| LBC846AWT3G | SC-70 | 10000/Tape&Reel |
| S-LBC846AWT1G | SC-70 | 3000/Tape&Reel |
| S-LBC846AWT3G | SC-70 | 10000/Tape&Reel |
2202090930_LRC-LBC847AWT1G_C2972798.pdf
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