N channel Power MOSFET MagnaChip Semicon MMF80R290RTH featuring low EMI and reduced switching losses
Key Attributes
Model Number:
MMF80R290RTH
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
17A
RDS(on):
250mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Output Capacitance(Coss):
29.7pF
Input Capacitance(Ciss):
1.414nF
Pd - Power Dissipation:
43.6W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
MMF80R290RTH
Package:
TO-220F
Product Description
Product Overview
The MMF80R290R is a high-performance N-channel Power MOSFET utilizing MagnaChip's advanced super junction technology. It offers very low on-resistance and gate charge, leading to significantly improved efficiency through optimized charge coupling technology. This device provides designers with the advantages of low EMI and reduced switching losses, making it suitable for various power applications.
Product Attributes
- Brand: MagnaChip Semiconductor Ltd.
- Order Code: MMF80R290R
- Marking: 80R290R
- Temperature Range: -55 ~ 150C
- Package: TO-220F
- Packing: Tube
- RoHS Status: Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain Source Breakdown voltage | V(BR)DSS | 800 | V | VGS = 0V, ID = 1mA |
| Gate Threshold Voltage | VGS(th) | 3.0 | V | VDS = VGS, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | A | VDS = 800V, VGS = 0V |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 30V, VDS =0V |
| Drain-Source On State Resistance | RDS(ON) | 0.29 | VGS = 10V, ID = 11A | |
| Input Capacitance | Ciss | 1414 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Output Capacitance | Coss | 29.7 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Reverse Transfer Capacitance | Crss | 3.8 | pF | VDS = 400V, VGS = 0V, f = 400kHz |
| Effective Output Capacitance Energy Related | Co(er) | 43.7 | pF | VDS = 0V to 640V, VGS = 0V, f = 400kHz |
| Effective Output Capacitance Time Related | Co(tr) | 240 | - | VDS = 0V to 640V, VGS = 0V, f = 400kHz |
| Turn On Delay Time | td(on) | 28 | ns | VGS = 10V, RG = 25, VDD = 400V, ID = 17A |
| Rise Time | tr | 50 | ns | VGS = 10V, RG = 25, VDD = 400V, ID = 17A |
| Turn Off Delay Time | td(off) | 129 | ns | VGS = 10V, RG = 25, VDD = 400V, ID = 17A |
| Fall Time | tf | 44 | ns | VGS = 10V, RG = 25, VDD = 400V, ID = 17A |
| Total Gate Charge | Qg | 39 | nC | VGS = 10V, VDD = 640V, ID = 17A |
| Gate Source Charge | Qgs | 7.3 | nC | VGS = 10V, VDD = 640V, ID = 17A |
| Gate Drain Charge | Qgd | 19.2 | nC | VGS = 10V, VDD = 640V, ID = 17A |
| Gate Resistance | RG | 5.3 | VGS = 0V, f = 1MHz | |
| Continuous Diode Forward Current | ISD | 17 | A | - |
| Diode Forward Voltage | VSD | 1.4 | V | ISD = 17A, VGS = 0V |
| Reverse Recovery Time | trr | 466 | ns | ISD = 17A di/dt = 100A/s VDD = 100V |
| Reverse Recovery Charge | Qrr | 7.6 | C | ISD = 17A di/dt = 100A/s VDD = 100V |
| Reverse Recovery Current | Irrm | 32.5 | A | ISD = 17A di/dt = 100A/s VDD = 100V |
| Drain Source voltage | VDSS | 800 | V | Tj,max |
| RDS(on),max | RDS(ON) | 0.29 | - | |
| VTH,typ | VGS(th) | 3.0 | V | - |
| ID | ID | 17 | A | - |
| Qg,typ | Qg | 39 | nC | - |
2509121533_MagnaChip-Semicon-MMF80R290RTH_C51902191.pdf
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