Automotive Grade NPN Transistor LRC LMBT4401WT1G with PPAP Capability and RoHS Compliance in SC70 Package
Key Attributes
Model Number:
LMBT4401WT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT4401WT1G
Package:
SC-70
Product Description
Product Overview
The LMBT4401WT1G and S-LMBT4401WT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. They are AEC-Q101 qualified and PPAP capable. The S-prefix variants are specifically for automotive and similar applications with stringent control requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Certifications: AEC-Q101 qualified, PPAP capable (S-prefix variants)
- Package: SC70 (SOT-323)
Technical Specifications
| Parameter | Symbol | LMBT4401WT1G | S-LMBT4401WT1G | Min. | Max. | Unit |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | VCEO | 40 | V | |||
| CollectorBase Voltage | VCBO | 60 | V | |||
| EmitterBase Voltage | VEBO | 6 | V | |||
| Collector Current Continuous | IC | 600 | mA | |||
| Total Device Dissipation, FR5 Board | PD | 833 | mW | |||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | - | V | ||
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | - | V | ||
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | - | V | ||
| Collector Cutoff Current | ICEX | - | 0.1 | A | ||
| Base Cutoff Current | IBEV | - | 0.1 | A | ||
| DC Current Gain | HFE | 20 | 40 | - | - | - |
| CollectorEmitter Saturation Voltage | VCE(sat) | - | 1.2 | V | ||
| BaseEmitter Saturation Voltage | VBE(sat) | - | 0.95 | V | ||
| CurrentGain Bandwidth Product | fT | 250 | - | - | MHz | |
| CollectorBase Capacitance | Ccb | - | 6.5 | pF | ||
| EmitterBase Capacitance | Ceb | - | 30 | pF | ||
| Input Impedance | hie | 1 | - | 15 | K | |
| Voltage Feedback Ratio | hre | - | 0.1 | - | ||
| SmallSignal Current Gain | hfe | 40 | - | 500 | - | |
| Output Admittance | hoe | - | 30 | mhos | ||
| Delay Time | td | - | 2.0 | ns | ||
| Rise Time | tr | - | 20 | ns | ||
| Storage Time | ts | - | 30 | ns | ||
| Fall Time | tf | - | 225 | ns | ||
2109282230_LRC-LMBT4401WT1G_C383232.pdf
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