Littelfuse IXYS DSEE15-12CC Phase Leg HiPerFRED Diode with Very Short Recovery Time and Reduced EMI

Key Attributes
Model Number: DSEE15-12CC
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@600V
Reverse Recovery Time (trr):
25ns
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
2.25V@30A
Current - Rectified:
15A
Mfr. Part #:
DSEE15-12CC
Package:
ISOPLUS-220-3
Product Description

Product Overview

The IXYS DSEE15-12CC is a high-performance Fast Recovery Diode, specifically a Phase leg HiPerFRED diode. It features low loss and soft recovery characteristics, making it ideal for demanding applications. Key advantages include very short recovery times, improved thermal behavior, very low reverse recovery current (Irm) values, and soft reverse recovery for reduced EMI/RFI. These benefits lead to lower power dissipation within the diode and reduced turn-on loss in the commutating switch. The DSEE15-12CC is suitable as an antiparallel diode for high-frequency switching devices, an antisaturation diode, a snubber diode, and a free-wheeling diode. It is also used in rectifiers for switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

Product Attributes

  • Brand: IXYS
  • Package: ISOPLUS220
  • Certifications: RoHS compliant, Epoxy meets UL 94V-0
  • Backside: DCB ceramic
  • Mounting: Soldering pins for PCB mounting

Technical Specifications

Symbol Definition Conditions Unit min typ max
Part number DSEE15-12CC
VRRM max. repetitive reverse blocking voltage TVJ = 25C V 600
VRMS RMS current A 35
IF(AV) average forward current A 150
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; TVJ = 45C A 600
Ptot total power dissipation TC = 25C W 110
VF forward voltage drop IF = 15 A; TVJ = 25C V 1.35 1.59
VF0 threshold voltage V 0.99
rF slope resistance for power loss calculation only m 15
RthJC thermal resistance junction to case K/W 0.50
RthCH thermal resistance case to heatsink K/W 1.6
TVJ virtual junction temperature C -55 175
Tstg storage temperature C -55 150
Isolation Voltage Vt = 1 second V~ 3600
Weight g 1.0
CJ junction capacitance VR = 400 V; f = 1 MHz pF 12
trr reverse recovery time IF = 15 A; VR = 300 V; -diF/dt = 600 A/s; TVJ = 100C ns 19 25
IRM max. reverse recovery current IF = 15 A; VR = 300 V; -diF/dt = 600 A/s; TVJ = 100C A 11
Qr reverse recovery charge IF = 15 A; VR = 300 V; -diF/dt = 600 A/s; TVJ = 100C nC 83

2411220102_Littelfuse-IXYS-DSEE15-12CC_C461284.pdf

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