General purpose PNP transistor LRC LBC857BWT1G silicon device with AEC Q101 and PPAP certification
Key Attributes
Model Number:
LBC857BWT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
4uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC857BWT1G
Package:
SC-70
Product Description
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/ SC70 which is designed for low power surface mount applications. AEC-Q101 Qualified and PPAP Capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS compliant
- Package: SOT323 / SC-70
Technical Specifications
| Characteristic | Symbol | BC856 | BC857 | BC858 | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS | |||||
| CollectorEmitter Voltage | V CEO | 65 | 45 | 30 | V |
| CollectorBase Voltage | V CBO | 80 | 50 | 30 | V |
| EmitterBase Voltage | V EBO | 5.0 | 5.0 | 5.0 | V |
| Collector Current Continuous | I C | 100 | 100 | 100 | mAdc |
| Total Device Dissipation FR 5 Board, (1) TA = 25C | P D | 150 | mW | ||
| Thermal Resistance, Junction to Ambient | R JA | 833 | C/W | ||
| Junction and Storage Temperature | T J , T stg | 55 to +150 | C | ||
| ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) | |||||
| OFF CHARACTERISTICS | |||||
| CollectorEmitter Breakdown Voltage (IC = 10 mA) | V (BR)CEO | 65 | 45 | 30 | v |
| CollectorEmitter Breakdown Voltage (IC = 10 A, VEB = 0) | V (BR)CES | 80 | 50 | 30 | v |
| CollectorBase Breakdown Voltage (IC = 10 A) | V (BR)CBO | 80 | 50 | 30 | v |
| EmitterBase Breakdown Voltage (IE = 1.0 A) | V (BR)EBO | 5.0 | 5.0 | 5.0 | v |
| Collector Cutoff Current (VCB = 30 V) | I CBO | 15 | nA | ||
| Collector Cutoff Current (VCB = 30 V, TA = 150C) | I CBO | 4.0 | A | ||
| ON CHARACTERISTICS | |||||
| DC Current Gain (IC = 2.0 mA, V CE = 5.0 V) | h FE | 125 250 | 220 475 | 420 800 | |
| CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | V CE(sat) | 0.3 | V | ||
| CollectorEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | V CE(sat) | 0.65 | V | ||
| BaseEmitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | V BE(sat) | 0.7 | 0.7 | 0.7 | V |
| BaseEmitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) | V BE(sat) | 0.9 | 0.9 | 0.9 | V |
| BaseEmitter Voltage (IC = 2.0 mA, V CE = 5.0 V) | V BE(on) | 0.6 0.75 | 0.6 0.75 | 0.6 0.75 | V |
| BaseEmitter Voltage (IC = 10 mA, V CE = 5.0 V) | V BE(on) | 0.82 | 0.82 | 0.82 | V |
| SMALLSIGNAL CHARACTERISTICS | |||||
| CurrentGain Bandwidth Product (IC = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) | f T | 100 | 100 | 100 | MHz |
| Output Capacitance (V CB = 10 V, f = 1.0 MHz) | Cob | 4.5 | pF | ||
| Noise Figure (IC= 0.2 mA,V CE= 5.0 Vdc, RS= 2.0 k, f =1.0 kHz, BW= 200 Hz) | NF | 10 | dB | ||
2212131909_LRC-LBC857BWT1G_C5273078.pdf
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