Silicon NPN transistor LRC LMBT2222ADW1T1G AEC Q101 qualified for automotive and electronic circuits
Key Attributes
Model Number:
LMBT2222ADW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT2222ADW1T1G
Package:
SOT-363(SC-88)
Product Description
Product Overview
The LMBT2222ADW1T1G and LMBT2222ADW1T3G are dual general-purpose NPN silicon transistors designed for various electronic applications. They are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other demanding applications requiring unique site and control change requirements.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified, PPAP Capable, ROHS Compliant
Technical Specifications
| Device | Order Information | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) - Continuous | Total Package Dissipation (PD) @ TA = 25C | Thermal Resistance (RJA) | Junction and Storage Temperature (TJ, Tstg) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Emitter-Base Breakdown Voltage (V(BR)EBO) | Collector Cutoff Current (ICEX) | Collector Cutoff Current (ICBO) | Emitter Cutoff Current (IEBO) | Base Cutoff Current (IBL) | DC Current Gain (hFE) @ IC = 0.1 mAdc, VCE = 10 Vdc | DC Current Gain (hFE) @ IC = 1.0 mAdc, VCE = 10 Vdc | DC Current Gain (hFE) @ IC = 10 mAdc, VCE = 10 Vdc | DC Current Gain (hFE) @ IC = 150 mAdc, VCE = 10 Vdc | Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 150 mAdc, IB = 15 mAdc | Base-Emitter Saturation Voltage (VBE(sat)) @ IC = 150 mAdc, IB = 15 mAdc | Current-Gain Bandwidth Product (fT) @ IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz | Output Capacitance (Cobo) @ VCB = 10 Vdc, IE = 0, f = 1.0 MHz | Input Capacitance (Cibo) @ VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz | Delay Time (td) | Rise Time (tr) | Storage Time (ts) | Fall Time (tf) |
| LMBT2222ADW1T1G | 10000/Tape & Reel | 40 Vdc | 75 Vdc | 6.0 Vdc | 600 mAdc | 150 mW | 833 C/W | 55 to +150 C | 40 Vdc | 75 Vdc | 6.0 Vdc | 10 nAdc | 0.01 Adc (TA = 125C) | 100 nAdc | 20 nAdc | 35 | 50 | 75 | 100 | 0.3 Vdc | 0.6 Vdc | 300 MHz | 8.0 pF | 25 pF | 10 ns | 25 ns | 225 ns | 60 ns |
| LMBT2222ADW1T3G | 3000/Tape & Reel | 40 Vdc | 75 Vdc | 6.0 Vdc | 600 mAdc | 150 mW | 833 C/W | 55 to +150 C | 40 Vdc | 75 Vdc | 6.0 Vdc | 10 nAdc | 0.01 Adc (TA = 125C) | 100 nAdc | 20 nAdc | 35 | 50 | 75 | 100 | 0.3 Vdc | 0.6 Vdc | 300 MHz | 8.0 pF | 25 pF | 10 ns | 25 ns | 225 ns | 60 ns |
2006151233_LRC-LMBT2222ADW1T1G_C559075.pdf
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