PNP Silicon Transistor LRC L8550PLT1G General Purpose Component for Electronic Circuit Applications
Key Attributes
Model Number:
L8550PLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
150nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
-
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L8550PLT1G
Package:
SOT-23
Product Description
Product Overview
General Purpose PNP Silicon Transistors designed for various applications. These transistors offer reliable performance with specific electrical and thermal characteristics suitable for electronic circuits.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: PNP Silicon
- RoHS Compliance: Declared
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix series)
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
| Collector-Emitter Voltage | V CEO | -25 | V | |||
| Collector-Base Voltage | V CBO | -40 | V | |||
| Emitter-Base Voltage | V EBO | -5 | V | |||
| Collector Current-Continuous | I C | -800 | mAdc | |||
| DC Current Gain | H FE | 100 | 600 | I C =-100mA, VCE=-1V | ||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | I C =-800mA, IB=-80mA | ||
| Collector-Emitter Breakdown Voltage | V (BR)CEO | -25 | V | I C =-1.0mA | ||
| Emitter-Base Breakdown Voltage | V (BR)EBO | -5 | V | I E = -100 A | ||
| Collector-Base Breakdown Voltage | V (BR)CBO | -40 | V | I C= -100 A | ||
| Collector Cutoff Current | I CBO | -150 | nA | VCB = -35 V | ||
| Emitter Cutoff Current | I EBO | -150 | nA | VEB = -4V | ||
| Total Device Dissipation (FR-5 Board) | P D | 225 | mW | T A= 25 C | ||
| Derate above 25 C (FR-5 Board) | 1.8 | mW /C | ||||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RJA | 556 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | P D | 300 | mW | T A = 25 C | ||
| Derate above 25 C (Alumina Substrate) | 2.4 | mW /C | ||||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RJA | 417 | C/W | |||
| Junction and Storage Temperature | T J , T stg | -55 | +150 | C |
1809291631_LRC-L8550PLT1G_C132811.pdf
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