Dual PNP Small Signal Surface Mount Transistor LRC LMBT5401DW1T1G SOT363 Package RoHS Compliant
Key Attributes
Model Number:
LMBT5401DW1T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LMBT5401DW1T1G
Package:
SC-88
Product Description
Product Overview
The LMBT5401DW1T1G is a DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR from LESHAN RADIO COMPANY, LTD. It is designed for general purpose applications and is available in a SOT-363/SC-88 package. The device is RoHS compliant and an AEC-Q101 Qualified option (S- prefix) is available for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Product Type: DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
- Package: SOT-363/SC-88
- Certifications: AEC-Q101 Qualified (S- prefix for automotive)
- Compliance: RoHS
Technical Specifications
| Characteristic | Symbol | Value | Unit | Conditions |
| MAXIMUM RATINGS | ||||
| CollectorEmitter Voltage | V CEO | -150 | Vdc | |
| CollectorBase Voltage | V CBO | -160 | Vdc | |
| EmitterBase Voltage | V EBO | -5.0 | Vdc | |
| Collector Current Continuous | I C | -500 | mAdc | |
| Total Device Dissipation (FR5 Board) | PD | 225 | mW | TA = 25C |
| Derate above 25C (FR5 Board) | 1.8 | mW/C | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA= 25C |
| Derate above 25C (Alumina Substrate) | 2.4 | mW/C | ||
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | |
| OFF CHARACTERISTICS | ||||
| CollectorEmitter Breakdown Voltage | (BR)CEO | -150 | Vdc | (I C =-1.0 mAdc, I B = 0) |
| CollectorBase Breakdown Voltage | (BR)CBO | -160 | Vdc | (I C=-100 Adc, I E = 0) |
| EmitterBase Breakdown Voltage | (BR)EBO | -5.0 | Vdc | (I E=-10 Adc, I C = 0) |
| Collector Cutoff Current | I CBO | -50 nAdc | ( V CB =-120Vdc, I E = 0) | |
| Collector Cutoff Current | I CBO | -50 Adc | ( V CB =-120Vdc, I E = 0, T A=100 C) | |
| ON CHARACTERISTICS | ||||
| DC Current Gain | hFE | 50 | (IC = 1.0mAdc, V CE = 5.0 Vdc) | |
| DC Current Gain | hFE | 60 | 240 | (IC = 10 mAdc, V CE = 5.0 Vdc) |
| DC Current Gain | hFE | 50 | (IC = 50 mAdc, V CE = 5.0 Vdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.2 Vdc | (IC = 10 mAdc, IB = 1.0 mAdc) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.5 Vdc | (IC = 50 mAdc, I B = 5.0 mAdc) | |
| BaseEmitter Saturation Voltage | VBE(sat) | -1.0 Vdc | (IC = 10 mAdc, I B = 1.0 mAdc) | |
| BaseEmitter Saturation Voltage | VBE(sat) | -1.0 Vdc | (IC = 50 mAdc, I B = 5.0 mAdc) | |
| SMALLSIGNAL CHARACTERISTICS | ||||
| CurrentGain Bandwidth Product | f T | 100 | 300 MHz | (IC = 10 mAdc, V CE= 10 Vdc, f = 100 MHz) |
| Output Capacitance | C obo | 6.0 pF | (VCB= 10 Vdc, I E = 0, f = 1.0 MHz) | |
| SmallSignal Current Gain | h fe | 40 | 200 | (IC= 1.0mAdc, VCE = 10Vdc, f = 1.0 kHz) |
| Noise Figure | N F | 8.0 dB | (IC = 200 Adc, VCE= 5.0 Vdc,Rs=10, f = 1.0 kHz) | |
1809291521_LRC-LMBT5401DW1T1G_C128804.pdf
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