RoHS Compliant NPN Silicon Transistor LRC LMUN2212LT1G with Automotive Grade AEC Q101 Qualification
Key Attributes
Model Number:
LMUN2212LT1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2212LT1G
Package:
SOT-23
Product Description
Product Overview
The LMUN2212LT1G is a NPN Silicon Surface Mount Transistor featuring a monolithic bias resistor network. It is designed to simplify circuit design, reduce board space, and decrease component count. This device is compliant with RoHS requirements and Halogen Free. It is suitable for applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 Qualified (S-Prefix)
- PPAP Capable (S-Prefix)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25) | ||||||
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 50 | V | |||
| Collector Current | IC | 100 | mA | |||
| Total Power Dissipation @ Ta = 25C | PD | 1.5 | mW | (Note 1) | ||
| Derate above 25C | C/W | |||||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | 508 | C/W | (Note 1) | ||
| Operating and Storage Temperature Range | Topr, Tstg | 55 | +150 | C | ||
| Maximum Temperature for Soldering Purposes, Time in Solder Bath | TL | 260 | C | 10 Sec | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25) | ||||||
| OFF CHARACTERISTICS | ||||||
| Collector-Base Cutoff Current | ICBO | 100 | nA | VCB = 50 V, IE = 0 | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nA | VCE = 50 V, IB = 0 | ||
| Emitter-Base Cutoff Current | IEBO | 0.2 | mA | VEB = 6.0 V, IC = 0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | V | IC = 10 A, IE = 0 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | V | IC = 2.0 mA, IB = 0 | ||
| ON CHARACTERISTICS (Note 2.) | ||||||
| DC Current Gain | hFE | 60 | 100 | VCE = 10 V, IC = 5.0 mA | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.3 mA | ||
| Output Voltage (on) | VOL | 0.2 | V | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | ||
| Output Voltage (off) | VOH | 4.9 | V | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k | ||
| Input Resistor | R1 | 15.4 | 22 | 28.6 | k | |
| Resistor Ratio | R1/R2 | 0.8 | 1 | 1.2 | ||
| Device Marking and Ordering Information | ||||||
| LMUN2212LT1G | A8B | 3000/Tape&Reel | ||||
| S-LMUN2212LT1G | A8B | 10000/Tape&Reel | ||||
Notes:
- Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
- Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Package: SOT23 (TO236AB)
Pinout:
- PIN 1: BASE (INPUT)
- PIN 2: EMITTER (GROUND)
- PIN 3: COLLECTOR (OUTPUT)
1809062206_LRC-LMUN2212LT1G_C43984.pdf
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