Lead free diode LRC LBAV199LT1G with ultra small surface mount low leakage current and RoHS compliance
Key Attributes
Model Number:
LBAV199LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
5nA
Reverse Recovery Time (trr):
3us
Operating Junction Temperature Range:
-65℃~+150℃@(Tj)
Diode Configuration:
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max):
85V
Pd - Power Dissipation:
150mW
Voltage - Forward(Vf@If):
1V
Current - Rectified:
215mA
Mfr. Part #:
LBAV199LT1G
Package:
SOT-23
Product Description
Product Overview
The LBAS116LT1G is an ultra-small surface mount low leakage diode from LESHAN RADIO COMPANY, LTD. It features very low leakage current and is lead-free/RoHS compliant. Qualified to AEC-Q101 standards for high reliability, this diode is suitable for various applications requiring precise current control and minimal leakage.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020C
- Terminals: Solderable per MIL-STD-202, Method 208
- Lead Finish: Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe)
- Weight: 0.002 grams (approx.)
- Certifications: AEC-Q101 Standards
- RoHS Compliant: Yes
Technical Specifications
| Model | Device Marking | Shipping | Peak Repetitive Reverse Voltage (VRRM) | RMS Reverse Voltage (VR(RMS)) | Forward Continuous Current (IFM) | Power Dissipation (Pd) | Junction to Ambient Thermal Resistance (RJA) | Operating & Storage Temp (Tj, TSTG) | Reverse Breakdown Voltage (V(BR)R) | Forward Voltage (VF) | Leakage Current (IR) | Total Capacitance (CT) | Reverse Recovery Time (trr) |
| LBAS116LT1G | K50 | 3000 Tape & Reel | 85 V | 60 V | 215 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.0 V (Typ) @ 1.0mA | 5.0 nA (Typ) @ VR=75V | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAS116LT3G | K50 | 10000 Tape & Reel | 85 V | 60 V | 215 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.0 V (Typ) @ 1.0mA | 5.0 nA (Typ) @ VR=75V | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAW156LT1G | 53 | 3000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 0.90 V (Min) @ 1.0mA | 5.0 nA (Typ) @ VR=75V | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAW156LT3G | 53 | 10000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 0.90 V (Min) @ 1.0mA | 5.0 nA (Typ) @ VR=75V | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAV170LT1G | 51 | 3000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.1 V (Max) @ 10mA | 80 nA (Typ) @ VR=75V, Tj=150C | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAV170LT3G | 51 | 10000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.1 V (Max) @ 10mA | 80 nA (Typ) @ VR=75V, Tj=150C | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAV199LT1G | 52 | 3000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.25 V (Max) @ 50mA | 80 nA (Typ) @ VR=75V, Tj=150C | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
| LBAV199LT3G | 52 | 10000 Tape & Reel | 85 V | 60 V | 125 mA | 150 mW | 833 C/W | -65 to +150 C | 85 V | 1.25 V (Max) @ 50mA | 80 nA (Typ) @ VR=75V, Tj=150C | 2 pF (Typ) @ VR=0, f=1.0MHz | 3.0 s (Typ) |
1811021215_LRC-LBAV199LT1G_C12740.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
