High cell density p channel power mosfet MATSUKI ME4425 G providing switching in low voltage circuits
Key Attributes
Model Number:
ME4425-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.6A
RDS(on):
19mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
312pF
Number:
1 P-Channel
Output Capacitance(Coss):
383pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
3.1nF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
ME4425-G
Package:
SOP-8
Product Description
Product Overview
The ME4425 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a small surface mount package.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Variants: ME4425 (Pb-free), ME4425-G (Green product-Halogen free)
- Certifications: Pb-free, Halogen free
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TA=25) | ID | -10.6 | A | |
| Continuous Drain Current (TA=70) | ID | -8.5 | A | |
| Pulsed Drain Current | IDM | -42 | A | a. Pulse test; pulse width ≤ 300us, duty cycle≤ 2% |
| Avalanche Current | IAR | -44 | A | |
| Avalanche Energy with Single Pulse (L=0.1mH) | EAS | 96.8 | mJ | |
| Maximum Power Dissipation (TA=25) | PD | 2.5 | W | |
| Maximum Power Dissipation (TA=70) | PD | 1.6 | W | *The device mounted on 1in2 FR4 board with 2 oz copper |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 50 | /W | |
| Electrical Characteristics (TA =25 Unless Otherwise Specified) | ||||
| Gate Threshold Voltage | VGS(th) | -1 to -3 | V | VDS=VGS, ID=-250μA |
| Gate Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V, VGS=0V |
| Drain-Source On-State Resistance (VGS=-10V, ID= -9.1A) | RDS(ON) | 14 | mΩ | Typ |
| Drain-Source On-State Resistance (VGS=-4.5V, ID= -6.9A) | RDS(ON) | 19 | mΩ | Typ |
| Diode Forward Voltage | VSD | -0.8 to -1.2 | V | IS=-2.1A, VGS=0V |
| Total Gate Charge | Qg | 67 | nC | VDS=-15V, VGS=-10V, ID=-9.1A |
| Gate-Source Charge | Qgs | 11 | nC | Typ |
| Gate-Drain Charge | Qgd | 17 | nC | Typ |
| Input capacitance | Ciss | 3100 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 383 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 312 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Turn-On Delay Time | td(on) | 43.9 | ns | VDD=-15V, RL =15Ω, ID=-1A, VGEN=-10V, RG=6Ω |
| Turn-On Rise Time | tr | 18.3 | ns | |
| Turn-Off Delay Time | td(off) | 209 | ns | |
| Turn-Off Fall Time | tf | 56 | ns | |
2410121632_MATSUKI-ME4425-G_C3647152.pdf
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