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quality NPN Silicon Bias Resistor Transistor LRC LMUN2241LT1G with Halogen Free and RoHS Compliant Materials factory
quality NPN Silicon Bias Resistor Transistor LRC LMUN2241LT1G with Halogen Free and RoHS Compliant Materials factory

NPN Silicon Bias Resistor Transistor LRC LMUN2241LT1G with Halogen Free and RoHS Compliant Materials

Key Attributes
Model Number: LMUN2241LT1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
130kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
LMUN2241LT1G
Package:
SOT-23
Product Description

Product Overview

The LMUN2241LT1G and S-LMUN2241LT1G are NPN Silicon Surface Mount Transistors with integrated Monolithic Bias Resistor Networks. These devices are designed to simplify circuit design, reduce board space, and lower component count. They are suitable for automotive and other applications requiring unique site and control change requirements, with the S-prefix variants being AEC-Q101 qualified and PPAP capable. The materials comply with RoHS requirements and are Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD. (LRC)
  • Product Type: Bias Resistor Transistor
  • Transistor Type: NPN Silicon
  • Package Type: SOT23 (TO-236)
  • Certifications: AEC-Q101 qualified (S-prefix models), PPAP capable (S-prefix models)
  • Material Compliance: RoHS requirements, Halogen Free

Technical Specifications

Parameter Symbol Model R1 (K) R2 (K) Limits Unit Device Marking
Bias Resistor Transistor LMUN2241LT1G 100 3000/Tape&Reel A8U
Bias Resistor Transistor LMUN2241LT3G 100 10000/Tape&Reel A8U
Bias Resistor Transistor S-LMUN2241LT1G 100 3000/Tape&Reel A8U
CollectorBase Voltage VCBO 50 V
CollectorEmitter Voltage VCEO 50 V
Total Device Dissipation, FR5 Board (@ TA = 25C) PD 246 mW
Derate above 25C 1.5 mW/C
Thermal Resistance, JunctiontoAmbient (Note 1) RJA 508 C/W
Junction and Storage temperature TJ,Tstg -55+150 C
CollectorEmitter Breakdown Voltage (IC = 2.0 mA, IB = 0) VBR(CEO) 50 V
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) VBR(CBO) 50 V
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO 100 nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO 500 nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO 0.1 A
DC Current Gain (IC = 5 mA, VCE = 10 V) HFE 70 - 130
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 2.5 mA) VCE(sat) 0.25 V
Input Resistor R1 100 K
Output Voltage (on) (VCC = 5.0 V, VB = 5 V, RL =1.0K) VOL 0.2 V
Output Voltage (on) (VCC = 5.0 V, VB = 0.25 V, RL =1.0K) VOH 4.9 V
DIM (mm) X Y A B C
SOT23 0.80 0.90 2.00 0.95 0.95
DIM MIN NOR MAX
A 0.89 - 1.12
A1 0.01 - 0.10
A2 0.88 0.95 1.02
b 0.30 - 0.50
b1 0.30 0.40 0.45
c 0.08 - 0.20
c1 0.08 0.10 0.16
D 2.80 2.90 3.04
E 2.10 - 2.64
E1 1.20 1.30 1.40
e 0.95BSC
e1 1.90BSC
L 0.40 0.46 0.60
L1 0.54REF
0 8

All Dimensions in mm


2404091719_LRC-LMUN2241LT1G_C5273263.pdf

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