86--136 6733 2386
quality General purpose NPN silicon transistor LRC LBC817-16LT1G suitable for electronic device applications factory
quality General purpose NPN silicon transistor LRC LBC817-16LT1G suitable for electronic device applications factory

General purpose NPN silicon transistor LRC LBC817-16LT1G suitable for electronic device applications

Key Attributes
Model Number: LBC817-16LT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBC817-16LT1G
Package:
SOT-23
Product Description

General Purpose Transistors

The LBC817 series are NPN silicon general purpose transistors designed for a wide range of applications. They offer reliable performance in various operating conditions.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Certifications: RoHS compliant
  • Material: NPN Silicon

Technical Specifications

Characteristic Symbol LBC817-16 LBC817-25 LBC817-40 Unit Conditions
CollectorEmitter Voltage V CEO 45 V
CollectorBase Voltage V CBO 50 V
EmitterBase Voltage V EBO 5.0 V
Collector Current Continuous I C 500 mAdc
Total Device Dissipation (FR5 Board) P D 225 mW TA = 25C
Thermal Resistance, Junction to Ambient (FR5 Board) R JA 556 C/W
Total Device Dissipation (Alumina Substrate) P D 300 mW TA = 25C
Thermal Resistance, Junction to Ambient (Alumina Substrate) R JA 417 C/W
Junction and Storage Temperature T J , T stg 55 to +150 C
CollectorEmitter Breakdown Voltage V (BR)CEO 45 V IC = 10 mA
CollectorEmitter Breakdown Voltage V (BR)CES 50 V VEB = 0, IC = 10 A
EmitterBase Breakdown Voltage V (BR)EBO 5.0 V IE = 1.0 A
Collector Cutoff Current I CBO 100 nA VCB = 20 V
Collector Cutoff Current I CBO 5.0 A VCB = 20 V, TA = 150C
DC Current Gain h FE 100 250 160 400 250 600 IC = 100 mA, V CE = 1.0 V
CollectorEmitter Saturation Voltage V CE(sat) 0.7 V IC = 500 mA, IB = 50 mA
BaseEmitter On Voltage V BE(on) 1.2 V IC = 500 mA, V CE = 1.0 V
CurrentGain Bandwidth Product f T 100 MHz IC = 10 mA, V CE = 5.0 V dc, f = 100 MHz
Output Capacitance C obo 10 pF V CB = 10 V, f = 1.0 MHz

2412052036_LRC-LBC817-16LT1G_C383186.pdf

Related Products
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies factory
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.