Power transistor MATSUKI ME15N25F suitable for in notebooks LCD display inverters and load switches
Key Attributes
Model Number:
ME15N25F
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
12.5A
Operating Temperature -:
-55℃~+175℃
RDS(on):
220mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
39pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
61.9W
Input Capacitance(Ciss):
1.277nF@25V
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
ME15N25F
Package:
TO-220F
Product Description
Product Overview
The ME15N25F is a high-performance N-Channel logic enhancement mode power field effect transistor. Utilizing advanced high cell density DMOS trench technology, it offers extremely low on-state resistance and exceptional DC current capability. This makes it ideal for power management applications in notebooks, DC/DC converters, load switches, and LCD display inverters.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Variants: ME15N25F (Pb-free), ME15N25F-G (Green product-Halogen free)
- Packaging: TO-220F
- Certifications: Pb-free, Halogen free (for -G variant)
Technical Specifications
| Parameter | Symbol | Maximum Ratings (TC=25) | Unit | Electrical Characteristics (TC =25 Unless Otherwise Specified) | Symbol | Limit | Unit | Typical Characteristics (TJ =25 Noted) | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 250 | V | Drain-Source Breakdown Voltage | BVDSS | 250 | V | ||||
| Gate-Source Voltage | VGS | 25 | V | Gate Threshold Voltage | VGS(th) | 2 - 4 | V | ||||
| Continuous Drain Current | ID | 12.5 (TC=25) 10.4 (TC=70) | A | Gate Leakage Current | IGSS | 100 | nA | ||||
| Pulsed Drain Current | IDM | 50 | A | Zero Gate Voltage Drain Current | IDSS | 1 | A | ||||
| Maximum Power Dissipation | PD | 61.9 (TC=25) 43.3 (TC=70) | W | Drain-Source On-Resistance | RDS(ON) | 180 - 220 (VGS=10V, ID= 7A) | m | ||||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 175 | Diode Forward Voltage | VSD | 0.74 - 1 (IS=1A, VGS=0V) | V | |||||
| Thermal Resistance-Junction to Case | RJC | 2.42 | /W | Total Gate Charge | Qg | 70 (VDS=200V, VGS=10V, ID=14A) | nC | ||||
| Gate-Source Charge | Qgs | 16.3 | |||||||||
| Gate-Drain Charge | Qgd | 24.6 | |||||||||
| Input Capacitance | Ciss | 1277 (VDS=25V, VGS=0V,f=1MHz) | pF | ||||||||
| Output Capacitance | Coss | 118 | |||||||||
| Reverse Transfer Capacitance | Crss | 39 | |||||||||
| Turn-On Delay Time | td(on) | 44.4 (VDS=125V, RL =18, VGEN=10V, RG=25) | ns | ||||||||
| Turn-On Rise Time | tr | 43.4 | |||||||||
| Turn-Off Delay Time | td(off) | 199 | |||||||||
| Turn-Off Fall Time | tf | 75.9 |
2410121457_MATSUKI-ME15N25F_C3647147.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
