High Collector Current Capability PNP Transistor LRC LBTP560Y3T1G with RoHS and Halogen Free Compliance
Key Attributes
Model Number:
LBTP560Y3T1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
30nA
Pd - Power Dissipation:
550mW
Transition Frequency(fT):
120MHz
Type:
PNP
Current - Collector(Ic):
4.3A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
LBTP560Y3T1G
Package:
SOT-89
Product Description
Product Overview
The LBTP560Y3T1G and S-LBTP560Y3T1G are PNP transistors offering low collector-emitter saturation voltage, high collector current capability, and high collector current gain. These features contribute to high efficiency due to less heat generation and a smaller required Printed-Circuit Board (PCB) area. The S-prefix variant is suitable for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. Both variants comply with RoHS requirements and are Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Technical Specifications
| Parameter | Symbol | Limits | Unit | Notes |
| CollectorEmitter Voltage | VCEO | -60 | V | |
| CollectorBase Voltage | VCBO | -100 | V | |
| EmitterBase Voltage | VEBO | -7 | V | |
| Collector Current Continuous | IC | -4.3 | A | |
| Peak Collector Current | ICM | -15 | A | (tp 1 ms) |
| Total Device Dissipation, FR4 Board | PD | 550 | mW | @ TA = 25C |
| Derate above 25C | 2.25 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 4.4 | C/W | 1.PCB Size:30.0mm25.0mm1.6mm,FR-4 Board; |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C | |
| Collector Cutoff Current | ICBO | -30 | nA | (VCB = -80V, IE = 0 ) |
| Emitter CutOff Current | IEBO | -30 | nA | (VEB = -6 V, IC = 0 ) |
| Collector Cutoff Current | ICEO | -10 | A | (VCE= -60V,IB=0) |
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -60 | V | (IC = -10 mA,IB = 0) |
| CollectorBase Breakdown Voltage | VBR(CBO) | -100 | V | (IC = -100 A,IE = 0) |
| EmitterBase Breakdown Voltage | VBR(EBO) | -7 | V | (IE = -100 A,IC = 0) |
| DC Current Gain | HFE | 75-110 | (VCE = -1 V, IC = -10 mA) | |
| DC Current Gain | HFE | 100-200 | (VCE = -1 V, IC = -2 A) | |
| DC Current Gain | HFE | 250-300 | (VCE = -1 V, IC = -5 A) | |
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.95 | V | (IC = -0.1 A, IB = -10 mA) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -1.05 | V | (IC = -1 A, IB = -100 mA) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -1.4 | V | (IC = -2 A, IB = -200 mA) |
| CollectorEmitter Saturation Voltage | VCE(sat) | -2.5 | V | (IC = -5 A, IB = -500 mA) |
| BaseEmitter Saturation Voltage | VBE(sat) | -0.84 | V | (IC = -5 A, IB = -500 mA) |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.95 | V | (VCE = -1 V, IC = -5 A) |
| Transitional Frequency | fT | 120 | MHz | (VCE = -10 V, IC = -100 mA ,f = 50 MHz) |
| Output capacitance | Cobo | 48 | pF | (VCB = -10 V, f = 1 MHz) |
| Switching times | td(on) | 370 | ns | (IC =-1A, VCC =-10V,IB1 =IB2 =-100mA) |
| Switching times | td(off) | 390 | ns | (IC =-1A, VCC =-10V,IB1 =IB2 =-100mA) |
2410010133_LRC-LBTP560Y3T1G_C5273349.pdf
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