P Channel logic enhancement MOSFET MATSUKI ME4457 designed to minimize power loss in compact devices
Key Attributes
Model Number:
ME4457
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
5.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
68mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Number:
1 P-Channel
Input Capacitance(Ciss):
911pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
ME4457
Package:
SOP-8
Product Description
Product Overview
The ME4457 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density, DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki (implied by datasheet)
- Product Series: ME4457/ME4457-G
- Certifications: Pb-free (ME4457), Green product-Halogen free (ME4457-G)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
| Absolute Maximum Ratings | VDSS | -40 | V | Steady State | ||
| VGSS | ±20 | V | Steady State | |||
| ID | -5.9 | A | Continuous Drain Current (Tj=150, TA=25) | |||
| ID | -4.7 | A | Continuous Drain Current (Tj=150, TA=70) | |||
| IDM | -24 | A | Pulsed Drain Current | |||
| Maximum Power Dissipation | PD | 2.5 | W | TA=25 | ||
| PD | 1.6 | W | TA=70 | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient* | RJA | 50 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Static Electrical Characteristics | BVDSS | -40 | V | VGS=0, ID=-250A | ||
| VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250A | ||
| IGSS | ±100 | nA | VDS=0V, VGS=±20V | |||
| IDSS | -1 | A | VDS=-40V, VGS=0V | |||
| Drain-Source On-State Resistance | RDS(ON) | 37 | 45 | m | VGS=-10V, ID= -10A | |
| RDS(ON) | 54 | 68 | m | VGS=-4.5V, ID= -8A | ||
| Diode Forward Voltage | VSD | -0.9 | -1.2 | V | IS=-10A, VGS=0V | |
| Dynamic Electrical Characteristics | Qg | 21 | nC | VDS=-20V, VGS=-10V, ID=-5A | ||
| Qg | 10.5 | nC | VDS=-20V, VGS=-4.5V, ID=-5A | |||
| Qgs | 5 | |||||
| Qgd | 4.5 | |||||
| Input capacitance | Ciss | 911 | pF | VDS=-15V, VGS=0V, f=1MHz | ||
| Output Capacitance | Coss | 99 | pF | |||
| Reverse Transfer Capacitance | Crss | 67 | pF | |||
| Switching Characteristics | td(on) | 36 | ns | VDD=-15V, RL =15, VGEN=-10V, RG=6 | ||
| tr | 15 | ns | ||||
| td(off) | 58 | ns | ||||
| tf | 9 | ns |
2410121449_MATSUKI-ME4457_C2841354.pdf
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