Power Field Effect Transistor MATSUKI ME7114S G N Channel MOSFET for Low Side Switching Circuits
Key Attributes
Model Number:
ME7114S-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
71A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
84pF
Number:
1 N-channel
Output Capacitance(Coss):
260pF
Input Capacitance(Ciss):
1.69nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
ME7114S-G
Package:
DFN-8(3x3)
Product Description
Product Overview
The ME7114S-G is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring low-side switching and low in-line power loss in a compact surface mount package. Key features include exceptionally low RDS(ON) and high DC current capability.
Product Attributes
- Brand: Matsuki Electric/Force Mos
- Product Name: ME7114S-G
- Type: N-Channel Enhancement MOSFET
- Certifications: Green product-Halogen free
- Package: DFN(S) 3x3
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | 30 | V | |||
| VGS | ±20 | V | ||||
| ID | TC=25 | 71 | A | |||
| IDM | Pulsed | 74 | A | |||
| Power Dissipation | PD | TC=25 | 52 | W | ||
| PD | TC=70 | 33 | W | |||
| PD | TA=25 | 3.8 | W | |||
| PD | TA=70 | 2.4 | W | |||
| Operating Junction Temperature | TJ | -55 | 150 | |||
| Thermal Resistance | RJA | * | 26 | 33 | /W | |
| RJC | * | 1.9 | 2.4 | /W | ||
| Static Electrical Characteristics | V(BR)DSS | VGS=0V, ID=250A | 30 | V | ||
| VGS(th) | VDS=VGS, ID=250A | 1.0 | 3.0 | V | ||
| IGSS | VDS=0V, VGS=±20V | ±100 | nA | |||
| IDSS | VDS=30V, VGS=0V | 1 | μA | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=13A | 5.8 | 7 | mΩ | |
| RDS(ON) | VGS=4.5V, ID=10A | 8.5 | 10.5 | mΩ | ||
| Diode Forward Voltage | VSD | IS=2.8A, VGS=0V | 0.75 | 1.1 | V | |
| Dynamic Electrical Characteristics | Qg | VDS=15V, VGS=10V, ID=13A | 37 | nC | ||
| Qg | VDS=15V, VGS=4.5V, ID=13A | 18 | ||||
| Qgs | 7.7 | |||||
| Qgd | 8.8 | |||||
| Capacitance | Ciss | VDS=15V, VGS=0V, F=1MHz | 1690 | pF | ||
| Coss | 260 | |||||
| Crss | 84 | |||||
| Gate Resistance | Rg | VDS=0V, VGS=0V, F=1MHz | 0.9 | Ω | ||
| Switching Time | td(on) | VDS=15V, RL =15Ω, ID=1A, VGEN=10V, RG=6Ω | 20 | ns | ||
| tr | 16 | |||||
| Switching Time | td(off) | 63 | ns | |||
| tf | 11 |
Applications
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch
2410121527_MATSUKI-ME7114S-G_C2693571.pdf
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