ESD Protected N-Channel 60 Volt Power MOSFET LRC LBSS260DW1T1G for High Speed Switching Applications
Key Attributes
Model Number:
LBSS260DW1T1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
22.8pF@25V
Pd - Power Dissipation:
380mW
Mfr. Part #:
LBSS260DW1T1G
Package:
SC-88
Product Description
Product Overview
This N-Channel 60-V Power MOSFET is designed for high-speed switching applications. It offers ESD protection and complies with RoHS requirements and Halogen Free standards. The 'S-' prefix variants are qualified for automotive and other applications with unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. It is suitable for use in portable appliances and load switch applications.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 (for S- prefix models)
- PPAP Capable: Yes (for S- prefix models)
Technical Specifications
| Model | Device Type | Gate-to-Source Voltage (Continuous) | Drain-Source Voltage | Drain Current (Continuous) | Drain Current (Pulsed) | Total Device Dissipation (FR-4 Board) | Thermal Resistance (Junction-to-Ambient) | Junction and Storage Temperature | Maximum Lead Temperature for Soldering | Marking | Shipping |
|---|---|---|---|---|---|---|---|---|---|---|---|
| LBSS260DW1T1G | N-Channel 60-V Power Mosfet | ±20 Vdc | 60 Vdc | 380 mAdc | 800 mAdc | 328 mW @ TA = 25℃ | 2.9 ℃/mW | -55 to +150 ℃ | 260 ℃ (10 seconds) | J3 | 10000/Tape&Reel |
| S-LBSS260DW1T1G | J3 | 3000/Tape&Reel | |||||||||
| Electrical Characteristics (Ta= 25℃) | |||||||||||
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Conditions | |||||
| Drain-Source Breakdown Voltage | VBRDSS | 60 | - | - | Vdc | VGS = 0, ID = 250μAdc | |||||
| Zero Gate Voltage Drain Current | IDSS | - | - | 0.1 | μAdc | VGS = 0, VDS = 55 Vdc | |||||
| GateBody Leakage Current, Forward | IGSSF | - | 2 | - | μAdc | VGS=20V, VDS=0V | |||||
| GateBody Leakage Current, Reverse | IGSSR | - | -5 | - | μAdc | VGS= -20V, VDS=0V | |||||
| Gate Threshold Voltage | VGS(th) | 0.5 | - | 1.0 | Vdc | VDS=VGS, IDS=250μA | |||||
| Static DrainSource OnState Resistance | RDS(on) | - | - | 0.5 | Ohms | VGS=10V,IDS=0.5A | |||||
| - | - | 1.35 | Ohms | VGS=4.5V,ID=0.1A | |||||||
| Diode Forward Voltage | VSD | - | - | 1.44 | Vdc | ISD = 0.5 A, VGS = 0 V | |||||
| Input Capacitance | Ciss | - | 22.8 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |||||
| Output Capacitance | Coss | - | 3.5 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |||||
| Reverse Transfer Capacitance | Crss | - | 2.9 | - | pF | VDS = 25 Vdc, VGS = 0, f = 1.0 MHz | |||||
| Turn-On Delay Time | td(on) | - | 3.8 | - | ns | VDD = 30 Vdc , VGEN = 10 V,RG =25℆ ,RL =60 ℆ ,ID =500 mAdc | |||||
| Turn-Off Delay Time | td(off) | - | 19 | - | ns | VDD = 30 Vdc , VGEN = 10 V,RG =25℆ ,RL =60 ℆ ,ID =500 mAdc | |||||
| Outline and Dimensions (SC88/SOT-363) | |||||||||||
| Dimension | Millimeters (MIN/NOM/MAX) | Inches (MIN/NOM/MAX) | |||||||||
| A | 2.00 / 2.10 / 2.20 | 0.078 / 0.082 / 0.086 | |||||||||
| A1 | 0 / 0.05 / 0.10 | 0 / 0.002 / 0.004 | |||||||||
| b | 0.15 / 0.20 / 0.25 | 0.006 / 0.008 / 0.010 | |||||||||
| c | 0.08 / 0.10 / 0.12 | 0.003 / 0.004 / 0.005 | |||||||||
| D | 1.80 (NOM) | 0.071 (NOM) | |||||||||
| E | 1.15 / 1.25 / 1.35 | 0.045 / 0.049 / 0.053 | |||||||||
| E1 | 1.10 (NOM) | 0.043 (NOM) | |||||||||
| e | 0.65 BSC | 0.026 BSC | |||||||||
| L | 0.15 / 0.22 | 0.006 / 0.009 | |||||||||
| L2 | 0.26 / 0.36 / 0.46 | 0.010 / 0.014 / 0.018 | |||||||||
2410010130_LRC-LBSS260DW1T1G_C383205.pdf
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