LRC S LN2308ELT1G 60V N Channel Power MOSFET with Super High Density Cell Design and RoHS Compliance
Key Attributes
Model Number:
S-LN2308ELT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.6A
RDS(on):
100mΩ@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
16pF@30V
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
312pF@30V
Gate Charge(Qg):
3.3nC@30V
Mfr. Part #:
S-LN2308ELT1G
Package:
SOT-23
Product Description
Product Overview
The LN2308ELT1G and S-LN2308ELT1G are 60V N-Channel Power MOSFETs designed for efficient power management. They feature a super high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. These MOSFETs are Gate to Source ESD Protected and are compliant with RoHS requirements and Halogen Free. The S- prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications with unique site and control change requirements. Key applications include power management in notebooks, portable equipment, battery-powered systems, load switches, and DSCs.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: N-Channel Power MOSFET
- Voltage Rating: 60V
- Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified and PPAP capable (S- prefix models)
- Material: RoHS compliant and Halogen Free
- Packaging: Tape & Reel
Technical Specifications
| Model | Description | Device Marking | Shipping | Package | Drain-Source Voltage (VDSS) | Gate-to-Source Voltage (VGS) - Continuous | Drain Current (ID) - Continuous (TA = 25C) | Drain Current (IDM) - Pulsed (Note 1) | Maximum Power Dissipation (PD) | Thermal Resistance, JunctiontoAmbient (RJA) (Note 2) | Thermal Resistance, JunctiontoCase (RJC) | Junction and Storage Temperature (TJ, Tstg) | Drain-Source Breakdown Voltage (V(BR)DSS) (VGS = 0, ID = 250A) | Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250A) | Gate Body Leakage (IGSS) (VDS =0V, VGS =20V) | Zero Gate Voltage Drain Current (IDSS) (VDS =48V, VGS =0V) | Static DrainSource OnState Resistance (RDS(on)) (VGS = 10 V, ID = 2 A) | Static DrainSource OnState Resistance (RDS(on)) (VGS = 4.5 V, ID = 2 A) | Diode Forward Voltage (VSD) (IS =0.5A, VGS =0V) | Total Gate Charge (Qg) (VDS =30V, VGS =4.5V, ID =2A) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qgd) | Input Capacitance (Ciss) (VDS =30V, VGS =0V, f=1MHz) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-On Delay Time (td(on)) (VDD =30V, RL =30,ID =1A, VGEN =10V,RG =3) | Turn-On Rise Time (tr) | Turn-Off Delay Time (td(off)) | Turn-Off Fall Time (tf) | Gate Resistance (Rg) (VDS=0V ,VGS=0V, f=1.0MHz) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LN2308ELT1G | 60V N-Channel Power MOSFET | E08 | 10000/Tape&Reel | SOT23(TO-236) | 60 V | 20 V | 2.6 A | 10.4 A | 0.9 W | 140 /W | 105 /W | -55~+150 | 60 V | 1.5 - 2.5 V | 10 A | 1 A | 0.05 | 0.06 | 0.7 - 1.3 V | 16 nC | 3.6 nC | 3.3 nC | 312 pF | 120 pF | 11 pF | 17.1 ns | 10.2 ns | 10.2 ns | 17.1 ns | 4.8 | |
| S-LN2308ELT1G | 60V N-Channel Power MOSFET | E08 | 3000/Tape&Reel | SOT23(TO-236) | 60 V | 20 V | 2.6 A | 10.4 A | 0.9 W | 140 /W | 105 /W | -55~+150 | 60 V | 1.5 - 2.5 V | 10 A | 1 A | 0.05 | 0.06 | 0.7 - 1.3 V | 16 nC | 3.6 nC | 3.3 nC | 312 pF | 120 pF | 11 pF | 17.1 ns | 10.2 ns | 10.2 ns | 17.1 ns | 4.8 | |
| Note 1: Pulse width limited by the Maximum junction temperation. | |||||||||||||||||||||||||||||||
| Note 2: 1-in 2oz Cu PCB board. | |||||||||||||||||||||||||||||||
| Note 3: Pulse test; pulse width300s, duty cycle2%. | |||||||||||||||||||||||||||||||
Dimensions (SOT23-TO-236):
| Symbol | Dimension | Unit |
|---|---|---|
| A | 0.89 - 1.11 | mm |
| A1 | 0.01 - 0.1 | mm |
| b | 0.37 - 0.5 | mm |
| c | 0.09 - 0.18 | mm |
| D | 2.80 - 3.04 | mm |
| E | 2.10 - 2.64 | mm |
| e | 1.78 - 2.04 | mm |
| L | 0.10 - 0.3 | mm |
| L1 | 0.35 - 0.69 | mm |
| 0 - 10 | --- |
2410010201_LRC-S-LN2308ELT1G_C5383044.pdf
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