Low On Resistance N Channel 30V MOSFET LRC LN3406DT2AG Designed for DC DC Converters and Automotive

Key Attributes
Model Number: LN3406DT2AG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
2.141nF@15V
Gate Charge(Qg):
24nC@4.5V
Mfr. Part #:
LN3406DT2AG
Package:
DFN2020MD-6
Product Description

Product Overview

The LN3406DT2AG is an N-Channel 30V (D-S) MOSFET featuring low RDS(on) trench technology, fast switching speed, and low thermal impedance. It is designed for applications such as white LED boost converters and DC-DC converters, making it suitable for automotive systems. This device is Halogen Free and compliant with RoHS requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Model: LN3406DT2AG
  • Channel Type: N-Channel
  • Voltage Rating: 30V (D-S)
  • Material Compliance: Halogen Free, RoHS compliant
  • Device Marking: N6S
  • Packaging: 4000/Tape&Reel

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Conditions
DraintoSource Voltage VDSS 30 - - V
Drain-Source Breakdown Voltage V(BR)DSS 30 - - V (VGS =0V, ID =250A)
Gate-Source Breakdown Voltage V(BR)GSS 30 - - V (VDS =0V, ID =10A)
Gate-Source Voltage VGS - - 8 V
Gate-Source Threshold Voltage VGS(th) 0.4 - 1.3 V (VDS =VGS , ID =250A)
Gate Leakage Current IGSS - 100 nA (VDS =0V, VGS =8V)
Zero Gate Voltage Drain Current IDSS - - 1 A (VDS = 24 V, VGS = 0 V)
Zero Gate Voltage Drain Current IDSS - - 20 A (VDS = 24 V, VGS = 0 V,TJ = 55C)
Drain-Source On-Resistance RDS(ON) - 6.8 - m (VGS =4.5V, ID = 8A)
Drain-Source On-Resistance RDS(ON) - 13.5 - m (VGS =2.5V, ID = 6.8A)
Diode Forward Voltage VSD - - 1.2 V (IS = 1.7 A, VGS = 0 V)
Continuous Drain Current ID - 8.1 - A (Ta = 25C, Note 1)
Continuous Drain Current ID - 10 - A (Ta =70C, Note 1)
Pulsed Drain Current IDM - 40 - A (Note 2)
Maximum Power Dissipation PD - 2.1 - W (Ta =25C, Note 1)
Maximum Power Dissipation PD - 1.3 - W (Ta =70C, Note 1)
Maximum Junction-to-Ambient Thermal Resistance RJA - 62.5 110 /W (Note 1)
Operating Junction and Storage Temperature Range TJ/Tstg -55 - 150
Total Gate Charge Qg - 19 - nC (VDS =15V, VGS =4.5V, ID =8A)
Gate-Source Charge Qgs - 5 - nC (VDS =15V, ID =8A)
Gate-Drain Charge Qgd - 25 - nC (VDS =15V, ID =8A)
Turn-On Delay Time td(on) - 10.5 - ns (VDS =15V, ID =8A, VGS =4.5V, RL = 1.9, VGEN =4.5V, RGEN =6 )
Turn-On Rise Time tr - 20 - ns (VDS =15V, ID =8A, VGS =4.5V, RL = 1.9, VGEN =4.5V, RGEN =6 )
Turn-Off Delay Time td(off) - 229 - ns (VDS =15V, ID =8A, VGS =4.5V, RL = 1.9, VGEN =4.5V, RGEN =6 )
Turn-Off Fall Time tf - 105 - ns (VDS =15V, ID =8A, VGS =4.5V, RL = 1.9, VGEN =4.5V, RGEN =6 )
Input Capacitance Ciss - 205 - pF (VDS =15V, VGS =0V,f=1MHz)
Output Capacitance Coss - 200 - pF (VDS =15V, VGS =0V,f=1MHz)
Reverse Transfer Capacitance Crss - 25 - pF (VDS =15V, VGS =0V,f=1MHz)
Dimensions (DFN2020-6S) D 1.95 2.00 2.05 mm
Dimensions (DFN2020-6S) E 1.95 2.00 2.05 mm
Dimensions (DFN2020-6S) A 0.60 0.65 0.70 mm

2410010101_LRC-LN3406DT2AG_C2912036.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.