PNP silicon transistor LRC L9015QLT1G series offering collector emitter voltage of 45 volts in SOT23 package
Key Attributes
Model Number:
L9015QLT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
-
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
L9015QLT1G
Package:
SOT-23
Product Description
Product Overview
The L9015QLT1G series are general-purpose PNP silicon transistors from LESHAN RADIO COMPANY, LTD. They are complementary to the L9014 and are designed for various applications requiring reliable performance. Available in SOT-23 package, these transistors offer specific electrical characteristics suitable for general-purpose use.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified and PPAP Capable (for S-prefix devices)
- Compliance: RoHS requirements
Technical Specifications
| Symbol | Characteristic | L9015QLT1G Series (Min Typ Max) | Unit | Notes |
| VCEO | Collector-Emitter Voltage | -45 | V | |
| VCBO | Collector-Base Voltage | -50 | V | |
| VEBO | Emitter-Base Voltage | V | ||
| IC | Collector Current-Continuous | -100 | mA | |
| PD | Total Device Dissipation (FR-5 Board) | 225 | mW | Derate above 25C at 1.8 mW/C |
| RJA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | |
| PD | Total Device Dissipation (Alumina Substrate) | 300 | mW | Derate above 25C at 2.4 mW/C |
| RJA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | |
| TJ, Tstg | Junction and Storage Temperature | -55 to +150 | C | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | -45 | V | IC=-1.0mA |
| V(BR)EBO | Emitter-Base Breakdown Voltage | V | IE=-100A | |
| V(BR)CBO | Collector-Base Breakdown Voltage | -50 | V | IC=-100A |
| ICBO | Collector Cutoff Current | -100 | nA | VCB=-40V |
| IEBO | Emitter Cutoff Current | -100 | nA | VEB=-3V |
| hFE | DC Current Gain | 150 - 600 | IC=-1mA, VCE=-5V | |
| VCE(sat) | Collector-Emitter Saturation Voltage | -0.3 | V | IC=-100mA, IB=-5mA |
1810010216_LRC-L9015QLT1G_C79016.pdf
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