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quality Low Saturation Voltage NPN Silicon Transistor MCC 2SC2873-Y-TP Featuring Halogen Free and RoHS Compliance factory
quality Low Saturation Voltage NPN Silicon Transistor MCC 2SC2873-Y-TP Featuring Halogen Free and RoHS Compliance factory

Low Saturation Voltage NPN Silicon Transistor MCC 2SC2873-Y-TP Featuring Halogen Free and RoHS Compliance

Key Attributes
Model Number: 2SC2873-Y-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC2873-Y-TP
Package:
SOT-89
Product Description

Product Overview

The 2SC2873-O/2SC2873-Y is an NPN Silicon Epitaxial Transistor designed for high-speed switching applications. It features low saturation voltage and is complementary to the 2SA1213. This device is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating.

Product Attributes

  • Brand: MCCSEMI
  • Origin: Not specified
  • Material: Silicon Epitaxial
  • Color: Not specified
  • Certifications: RoHS Compliant, Halogen Free ("Green" Device), UL 94 V-0 Flammability Rating
  • Moisture Sensitivity Level: 1

Technical Specifications

ParameterSymbolRatingUnitConditions
Collector Power DissipationPC500mW@ 25C Unless Otherwise Specified
Collector CurrentIC2A@ 25C Unless Otherwise Specified
Collector-Emitter VoltageVCEO50V@ 25C Unless Otherwise Specified
Emitter-Base VoltageVEBO5V@ 25C Unless Otherwise Specified
Collector-Base VoltageVCBO50V@ 25C Unless Otherwise Specified
Operating Junction Temperature Range-55 to +150
Storage Temperature Range-55 to +150
Thermal Resistance (Junction to Ambient)250/W
Collector-Base Cutoff CurrentICBO0.1AVCB=50V, IE=0
Emitter-Base Cutoff CurrentIEBO0.1AVEB=5V, IC=0
Collector-Emitter Breakdown VoltageV(BR)CEO50VIC=1mA, IB=0
Collector-Base Breakdown VoltageV(BR)CBO50VIC=100A, IE=0
Emitter-Base Breakdown VoltageV(BR)EBO5VIE=100A, IC=0
DC Current Gain (Rank O)hFE170-140VCE=2V, IC=0.5A
DC Current Gain (Rank Y)hFE1120-240VCE=2V, IC=0.5A
DC Current Gain (Rank O/Y)hFE220VCE=2V, IC=2A
Transition FrequencyfT120MHzVCE=2V, IC=0.5A
Collector-Emitter Saturation VoltageVCE(sat)0.5VIC=1A, IB=50mA
Base-Emitter Saturation VoltageVBE(sat)1.2VIC=1A, IB=50mA
Collector Output CapacitanceCob30pFVCB=10V, IE=0, f=1MHz

2409302332_MCC-2SC2873-Y-TP_C7463929.pdf

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