NPN Silicon Planar Transistor MCC FMMT491 TP with Halogen Free Green Compliance and UL 94 V0 Rating
Key Attributes
Model Number:
FMMT491-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT491-TP
Package:
SOT-23
Product Description
Product Overview
The FMMT491 is a high-performance NPN Silicon Planar Transistor designed for various electronic applications. It offers features such as halogen-free "Green" device compliance, moisture sensitivity level 1, and adherence to UL 94 V-0 flammability rating. This lead-free and RoHS-compliant transistor is suitable for applications requiring robust performance and reliability.
Product Attributes
- Brand: MCCSEMI.COM
- Device Type: NPN Silicon Planar High Performance Transistor
- Certifications: Halogen Free, "Green" Device, Moisture Sensitivity Level 1, Epoxy Meets UL 94 V-0 Flammability Rating, Lead Free Finish/RoHS Compliant
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | @ 25C Unless Otherwise Specified |
| Emitter-Base Voltage | VEBO | 5 | V | @ 25C Unless Otherwise Specified |
| Continuous Collector Current | IC | 1 | A | @ 25C Unless Otherwise Specified |
| Power Dissipation | PD | 500 | mW | @ 25C Unless Otherwise Specified |
| Collector-Base Cutoff Current | ICBO | 0.1 | A | VCB=60V, IE=0 |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.1 | V | IC=1A, IB=100mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=1A, IB=100mA |
| DC Current Gain | hFE(3) | 80 | VCE=5V, IC=1A | |
| DC Current Gain | hFE(4) | 30 | VCE=5V, IC=2A | |
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | V | IC=0.1 A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=0.1 mA, IC=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 60 | V | IC=10 A, IB=0 |
| Emitter-Base Cutoff Current | IEBO | 0.1 | A | VEB=4V, IC=0 |
| Transition Frequency | fT | 150 | MHz | VCE=5V, IC=50mA, f=100MHz |
| Output Capacitance | Cob | 10 | pF | VCB=10V, IE=0, f=1MHz |
| DC Current Gain | hFE(1) | 100 | VCE=5V, IC=1mA | |
| DC Current Gain | hFE(2) | 100 | 300 | VCE=5V, IC=500mA |
| Base-Emitter Voltage | VBE | 0.25 | V | VCE=5V, IC=1mA |
| Base-Emitter Voltage | VBE | 1.0 | V | VCE=5V, IC=500mA |
| Collector Power Dissipation | PD | 400 | mW | Tamb=25C (Derated) |
| Operating Junction Temperature | TJ | +150 | ||
| Storage Temperature | Ts | +150 |
2410010102_MCC-FMMT491-TP_C2975482.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
