P Channel Enhancement Mode MOSFET LRC LP2707DT2AG with ultra low on resistance and Class 0 ESD rating

Key Attributes
Model Number: LP2707DT2AG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
RDS(on):
110mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
74.8pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
88.5pF
Pd - Power Dissipation:
1.9W
Input Capacitance(Ciss):
797.3pF
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
LP2707DT2AG
Package:
U-DFN2020-6
Product Description

Product Overview

The LP2707DT2AG is a 20V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers excellent performance with an RDS(ON) as low as 70m at VGS = -4.5V and IDS = -4.7A, and 110m at VGS = -2.5V and IDS = -1.0A. This MOSFET is suitable for various applications and features an ESD Rating of Class 0 (<100V) per Human Body Model. It complies with RoHS requirements and is Halogen Free. The 'S-' prefix denotes suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Product Type: P-Channel Enhancement-Mode MOSFET
  • Compliance: RoHS, Halogen Free
  • Qualification: AEC-Q101 (for S- prefix variants)
  • Material: RoHS compliant and Halogen Free
  • ESD Rating: Class 0 (<100V) per Human Body Model

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Notes
DrainSource Voltage VDSS -20 V
GatetoSource Voltage - Continuous VGS 12 V
Continuous Drain Current ID -7 A TA = 25C
Pulsed Drain Current IDM A Note 1
Operating and Storage Temperature Range TJ , Tstg -55 +150 C
Thermal Resistance-Junction to Ambient RJA 70 C/W Note 2 (1-in 2oz Cu PCB board)
Maximum Power Dissipation PD 1.9 W TA = 25C
Maximum Power Dissipation PD 0.7 W TA = 75C
DrainSource Breakdown Voltage VBRDSS -20 V VGS = 0, ID = -250A
Zero Gate Voltage Drain Current IDSS -1 A VDS =-20V, VGS =0V
GatetoSource Leakage Current IGSS 100 nA VDS = 0 V, VGS = 12 V
Gate Threshold Voltage VGS(th) -0.6 -0.85 -1.4 V VGS = VDS , ID =- 250A
Static DrainSource OnState Resistance RDS(on) 70 m VGS = -4.5V, ID =-4.7 A
Static DrainSource OnState Resistance RDS(on) 110 m VGS = -2.5 V, ID = -1 A
Static DrainSource OnState Resistance RDS(on) 95 m VGS = -2.7V, ID =-3.8 A
Forward Diode Voltage VSD -1.2 V VGS = 0 V, ISD = -1.7A
Total Gate Charge QG 16 nC Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
GatetoSource Gate Charge QGS 2.7 nC Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
GatetoDrain Charge QGD 8 nC Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
TurnOn Delay Time td(on) 25 ns (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 )
Rise Time tr 40 ns (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 )
TurnOff Delay Time td(off) 55 ns (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 )
Fall Time tf 35 ns (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 )
Forward Transconductance gFS 16 S (VDS = -10 V, ID = -4.7 A)
Input Capacitance Ciss 88.5 pF (VGS=0V,VDS= -10V,f=200kHz)
Output Capacitance Coss 797.3 pF (VGS=0V,VDS= -10V,f=200kHz)
Reverse Transfer Capacitance Crss 74.8 pF (VGS=0V,VDS= -10V,f=200kHz)
Device Marking LP2707DT2AG 1E
Ordering Information 4000/Tape&Reel

Package Dimensions

Dim DFN2020-6S MIN MAX
A 0.60 0.70
A1 0.01 0.03
b 0.25 0.30
D 1.95 2.05
E 1.95 2.05
e 0.65TYP.
X 0.05 0.15
X1 0.40
X2 0.20
L 0.23 0.33
L1 0.43
D1 1.70
Y 0.95
Y1 0.60
Y2 0.35
Y3 2.00
Y4 2.00
A3 0.65REF.

Soldering Footprint

DFN2020-6S REF
0.75
1.15
1.54
0.28
0.33
0.65
0.65
0.95
1.00
1.10
1.15
2.05

2111041830_LRC-LP2707DT2AG_C2912041.pdf

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