P Channel Enhancement Mode MOSFET LRC LP2707DT2AG with ultra low on resistance and Class 0 ESD rating
Product Overview
The LP2707DT2AG is a 20V P-Channel Enhancement-Mode MOSFET designed with advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers excellent performance with an RDS(ON) as low as 70m at VGS = -4.5V and IDS = -4.7A, and 110m at VGS = -2.5V and IDS = -1.0A. This MOSFET is suitable for various applications and features an ESD Rating of Class 0 (<100V) per Human Body Model. It complies with RoHS requirements and is Halogen Free. The 'S-' prefix denotes suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: P-Channel Enhancement-Mode MOSFET
- Compliance: RoHS, Halogen Free
- Qualification: AEC-Q101 (for S- prefix variants)
- Material: RoHS compliant and Halogen Free
- ESD Rating: Class 0 (<100V) per Human Body Model
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| DrainSource Voltage | VDSS | -20 | V | |||
| GatetoSource Voltage - Continuous | VGS | 12 | V | |||
| Continuous Drain Current | ID | -7 | A | TA = 25C | ||
| Pulsed Drain Current | IDM | A | Note 1 | |||
| Operating and Storage Temperature Range | TJ , Tstg | -55 | +150 | C | ||
| Thermal Resistance-Junction to Ambient | RJA | 70 | C/W | Note 2 (1-in 2oz Cu PCB board) | ||
| Maximum Power Dissipation | PD | 1.9 | W | TA = 25C | ||
| Maximum Power Dissipation | PD | 0.7 | W | TA = 75C | ||
| DrainSource Breakdown Voltage | VBRDSS | -20 | V | VGS = 0, ID = -250A | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS =-20V, VGS =0V | ||
| GatetoSource Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 12 V | ||
| Gate Threshold Voltage | VGS(th) | -0.6 | -0.85 | -1.4 | V | VGS = VDS , ID =- 250A |
| Static DrainSource OnState Resistance | RDS(on) | 70 | m | VGS = -4.5V, ID =-4.7 A | ||
| Static DrainSource OnState Resistance | RDS(on) | 110 | m | VGS = -2.5 V, ID = -1 A | ||
| Static DrainSource OnState Resistance | RDS(on) | 95 | m | VGS = -2.7V, ID =-3.8 A | ||
| Forward Diode Voltage | VSD | -1.2 | V | VGS = 0 V, ISD = -1.7A | ||
| Total Gate Charge | QG | 16 | nC | Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% | ||
| GatetoSource Gate Charge | QGS | 2.7 | nC | Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% | ||
| GatetoDrain Charge | QGD | 8 | nC | Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% | ||
| TurnOn Delay Time | td(on) | 25 | ns | (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 ) | ||
| Rise Time | tr | 40 | ns | (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 ) | ||
| TurnOff Delay Time | td(off) | 55 | ns | (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 ) | ||
| Fall Time | tf | 35 | ns | (VDD = -10V, RL =10 , D = 1, VGEN = -4.5V,RG = 6 ) | ||
| Forward Transconductance | gFS | 16 | S | (VDS = -10 V, ID = -4.7 A) | ||
| Input Capacitance | Ciss | 88.5 | pF | (VGS=0V,VDS= -10V,f=200kHz) | ||
| Output Capacitance | Coss | 797.3 | pF | (VGS=0V,VDS= -10V,f=200kHz) | ||
| Reverse Transfer Capacitance | Crss | 74.8 | pF | (VGS=0V,VDS= -10V,f=200kHz) | ||
| Device Marking | LP2707DT2AG | 1E | ||||
| Ordering Information | 4000/Tape&Reel |
Package Dimensions
| Dim | DFN2020-6S | MIN | MAX |
|---|---|---|---|
| A | 0.60 | 0.70 | |
| A1 | 0.01 | 0.03 | |
| b | 0.25 | 0.30 | |
| D | 1.95 | 2.05 | |
| E | 1.95 | 2.05 | |
| e | 0.65TYP. | ||
| X | 0.05 | 0.15 | |
| X1 | 0.40 | ||
| X2 | 0.20 | ||
| L | 0.23 | 0.33 | |
| L1 | 0.43 | ||
| D1 | 1.70 | ||
| Y | 0.95 | ||
| Y1 | 0.60 | ||
| Y2 | 0.35 | ||
| Y3 | 2.00 | ||
| Y4 | 2.00 | ||
| A3 | 0.65REF. |
Soldering Footprint
| DFN2020-6S | REF | |
|---|---|---|
| 0.75 | ||
| 1.15 | ||
| 1.54 | ||
| 0.28 | ||
| 0.33 | ||
| 0.65 | ||
| 0.65 | ||
| 0.95 | ||
| 1.00 | ||
| 1.10 | ||
| 1.15 | ||
| 2.05 |
2111041830_LRC-LP2707DT2AG_C2912041.pdf
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