Plastic Encapsulated NPN Transistor MCC BC847C-TP with UL 94 V0 Flammability and RoHS Certification
Key Attributes
Model Number:
BC847C-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC847C-TP
Package:
SOT-23
Product Description
Product Overview
The BC846A thru BC849C series are NPN plastic-encapsulated transistors designed for general-purpose applications. These devices feature a Halogen-free option and meet UL 94 V-0 flammability rating. They are RoHS compliant and suitable for various electronic circuits requiring reliable NPN transistor performance.
Product Attributes
- Brand: MCCSEMI.COM
- Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant
- Material: Plastic Encapsulate
- Moisture Sensitivity Level: 1
- Halogen Free: Available upon request by adding suffix "-HF"
Technical Specifications
| Parameter | Symbol | BC846A-BC846B | BC847A-BC847C | BC848A-BC848C, BC849B-BC849C | Unit | Conditions |
| Collector Current | IC | 100 | mA | @TA=25 | ||
| Collector Power Dissipation | PC | 225 | mW | @TA=25 (Note 1) | ||
| Collector-Emitter Voltage | VCEO | 65 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector-Base Voltage | VCBO | 80 | V | |||
| Operating Junction Temperature Range | -55 to +150 | |||||
| Storage Temperature Range | -55 to +150 | |||||
| Maximum Thermal Resistance | 625 | /W | Junction to Ambient | |||
| Collector Cut-off Current | ICBO | 0.1 | 0.1 | 0.1 | A | VCB=70V, IE=0; VCB=50V, IE=0; VCB=30V, IE=0 |
| Emitter Cut-off Current | IEBO | 0.1 | A | VEB=5V, IC=0 | ||
| Collector Cut-off Current | ICEO | 0.1 | 0.1 | 0.1 | A | VCE=60V, IB=0; VCE=45V, IB=0; VCE=30V, IB=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 65 | 45 | 30 | V | IC=10mA, IB=0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 80 | 50 | 45 | V | IC=10A, IE=0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10A, IC=0 | ||
| DC Current Gain | hFE | 420-800 | 220-450 | 100-200 | VCE=5V, IC=2mA | |
| DC Current Gain | hFE | 300-600 | 220-450 | 100-200 | VCE=5V, IC=10mA | |
| DC Current Gain | hFE | 100-300 | 100-250 | 100-200 | VCE=5V, IC=100mA | |
| Transition Frequency | fT | 100 | MHz | VCE=5V, IC=10mA, f=100MHz | ||
| Collector Output Capacitance | Cob | 4.5 | pF | VCB=10V, f=1MHz | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.85-1.10 | 0.85-1.10 | 0.85-1.10 | V | IC=100mA, IB=5mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2-0.5 | 0.2-0.5 | 0.2-0.5 | V | IC=100mA, IB=5mA |
Note 1: Transistor mounted on an FR4 printed-circuit board.
2410121951_MCC-BC847C-TP_C668874.pdf
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