silicon transistor LRC LBC857BTT1G in SC89 package suitable for amplifier and automotive electronic applications
Key Attributes
Model Number:
LBC857BTT1G
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
LBC857BTT1G
Package:
SC-89
Product Description
Product Overview
The LBC857ATT1G Series are general purpose PNP silicon transistors designed for amplifier applications. They are housed in the low-power SC-89 surface mount package. Pb-Free packages are available. The S- prefix denotes automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Certifications: AEC-Q101 Qualified (S- prefix models)
- Package: SC-89
- Lead Free: Yes
Technical Specifications
| Device Marking | Package | Collector-Emitter Voltage (VCEO) | Collector-Base Voltage (VCBO) | Emitter-Base Voltage (VEBO) | Collector Current (IC) (Continuous) | Total Device Dissipation (PD) (FR-4 Board, TA=25C) | Junction and Storage Temperature Range (TJ, Tstg) | Collector Cutoff Current (ICBO) (VCB = -30 V) | DC Current Gain (hFE) (IC = -10 mA, VCE = -5.0 V) | Collector-Emitter Saturation Voltage (VCE(sat)) (IC = -10 mA, IB = -0.5 mA) | Base-Emitter Saturation Voltage (VBE(sat)) (IC = -10 mA, IB = -0.5 mA) | Current-Gain - Bandwidth Product (fT) (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) | Output Capacitance (Cob) (VCB = -10 V, f = 1.0 MHz) | Noise Figure (NF) (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) |
| 3E (LBC857ATT1G) | SC-89 | -45 V | -50 V | -5.0 V | -100 mAdc | 200 mW | -55 to +150 C | -15 nA | LBC857A: 90-220 LBC857B: 125-250 LBC857C: 150-475 | -0.3 V | -0.7 V | 100 MHz | 4.5 pF | LBC857A: 10 dB |
| 3F (LBC857BTT1G) | SC-89 | -45 V | -50 V | -5.0 V | -100 mAdc | 200 mW | -55 to +150 C | -15 nA | LBC857B: 125-250 | -0.3 V | -0.7 V | 100 MHz | 4.5 pF | LBC857A: 10 dB |
| 3G (LBC857CTT1G) | SC-89 | -45 V | -50 V | -5.0 V | -100 mAdc | 200 mW | -55 to +150 C | -15 nA | LBC857C: 150-475 | -0.3 V | -0.7 V | 100 MHz | 4.5 pF | LBC857A: 10 dB |
1912111437_LRC-LBC857BTT1G_C383199.pdf
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