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quality NPN transistor MCC MMBT3904T TP with UL 94 V0 flammability rating and wide storage temperature range factory
quality NPN transistor MCC MMBT3904T TP with UL 94 V0 flammability rating and wide storage temperature range factory

NPN transistor MCC MMBT3904T TP with UL 94 V0 flammability rating and wide storage temperature range

Key Attributes
Model Number: MMBT3904T-TP
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT3904T-TP
Package:
SOT-523
Product Description

Overview

The MMBT3904T is a general-purpose NPN amplifier designed for various electronic applications. It features a lead-free, RoHS-compliant finish and is available in a halogen-free option. This device meets UL 94 V-0 flammability rating and offers a wide operating and storage temperature range.

Product Attributes

  • Brand: MCCSEMI
  • Certifications: RoHS Compliant, Halogen Free Available, UL 94 V-0 Flammability Rating
  • Internal Structure: NPN General Purpose Amplifier
  • Marking: 1N

Technical Specifications

ParameterSymbolRatingConditionsUnit
Collector CurrentIC200mA
Collector Power DissipationPC150mW
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector-Base VoltageVCBO60V
Operating Junction Temperature Range-55 to +150
Storage Temperature Range-55 to +150
Collector-Base Cutoff CurrentICBO50VCB=30V, IE=0nA
Emitter-Base Cutoff CurrentIEBO50VEB=5V, IC=0nA
Collector-Emitter Saturation VoltageVCE(sat)0.2VCE=1V, IC=10mA, IB=1mAV
Collector-Emitter Saturation VoltageVCE(sat)0.3VCE=1V, IC=50mA, IB=5mAV
Base-Emitter Saturation VoltageVBE(sat)0.65VCE=1V, IC=10mA, IB=1mAV
Base-Emitter Saturation VoltageVBE(sat)0.85VCE=1V, IC=50mA, IB=5mAV
DC Current GainhFE(1)30VCE=1V, IC=0.1mA
DC Current GainhFE(2)70VCE=1V, IC=1mA
DC Current GainhFE(3)100VCE=1V, IC=10mA
DC Current GainhFE(4)60VCE=1V, IC=50mA
DC Current GainhFE(5)30VCE=1V, IC=100mA
Emitter-Base Breakdown VoltageV(BR)EBO6IE=10A, IC=0V
Collector-Emitter Breakdown VoltageV(BR)CEO40IC=1mA, IB=0V
Collector-Base Breakdown VoltageV(BR)CBO60IE=0, IC=0V
Transition FrequencyfT300IC=10mA, IB=1mAMHz
Output CapacitanceCob4VCB=5V, IE=0, f=1MHzpF
Delay Timetd35VCC=3V, VBE=0.5Vns
Rise Timetr35IC=10mA, IB=1mAns
Storage Timets200VCC=3V, IC=10mA, IB1=1mAns
Fall Timetf50ns
Noise FigureNF5RS=1K, f=1MHzdB

2410010204_MCC-MMBT3904T-TP_C668969.pdf

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