AEC Q101 qualified switching diode LRC S-LBAS21HT1G PPAP capable RoHS compliant halogen free device
Key Attributes
Model Number:
S-LBAS21HT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
S-LBAS21HT1G
Package:
SOD-323
Product Description
Product Overview
The LBAS21HT1G and S-LBAS21HT1G are high voltage switching diodes designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variants are AEC-Q101 qualified and PPAP capable. These diodes are RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
- Certifications: AEC-Q101 qualified (S-prefix), PPAP capable (S-prefix)
Technical Specifications
| Parameter | Symbol | LBAS21HT1G / S-LBAS21HT1G | Unit | Notes |
| MAXIMUM RATINGS | ||||
| Continuous Reverse Voltage | VR | 200 | V | |
| Peak Forward Current | IFRM | 625 | mA | |
| Repetitive Peak Forward Surge Current | IFSM | 9 | A | (tp=1ms, =0.2) |
| Non-Repetitive Peak Forward Surge Current | IFSM | 3 | A | (tp =1s) |
| Non-Repetitive Peak Forward Surge Current | IFSM | 1.7 | A | (tp =10ms) |
| Junction and Storage Temperature Range | TJ , Tstg | -55~+150 | ||
| Total Device Dissipation | PD | 1.57 | mW | FR 5 Board |
| Derate above 25C | 200 | mW/ | ||
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction to Ambient | RJA | 635 | /W | FR 5 Board, (Note 1) |
| ELECTRICAL CHARACTERISTICS | ||||
| Reverse Breakdown Voltage | VBR | 200 | V | (IBR = 100 A) |
| Reverse Voltage Leakage Current | IR | 0.1 | A | (VR=200V) |
| Reverse Voltage Leakage Current | IR | 250 | A | (VR=200V, TJ = 150C) |
| Forward voltage | VF | 1000 | mV | (IF =100mA) |
| Forward voltage | VF | 1250 | mV | (IF =200mA) |
| Diode capacitance | Cd | 5 | pF | (f=1MHz,VR =0) |
| Reverse Recovery Time | Trr | 50 | nS | (IF = IR = 30mA, RL = 100) |
Device Marking and Shipping
| Device Marking | Shipping | Quantity |
| LBAS21HT1G | JS | 3000/Tape&Reel |
| S-LBAS21HT1G | JS | 3000/Tape&Reel |
| LBAS21HT3G | JS | 10000/Tape&Reel |
| S-LBAS21HT3G | JS | 10000/Tape&Reel |
2410010202_LRC-S-LBAS21HT1G_C559090.pdf
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