Low Forward Voltage Schottky Diode LRC LBAT54BST5G Ideal for High Speed Switching Electronic Circuits

Key Attributes
Model Number: LBAT54BST5G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
240mV
Current - Rectified:
200mA
Mfr. Part #:
LBAT54BST5G
Package:
SOD-882
Product Description

Product Overview

The LBAT54BST5G/S-LBAT54BST5G are Schottky Barrier Diodes designed for high-speed switching applications. They offer a low forward voltage of 0.35 Volts (Typ) at 10 mAdc, contributing to efficient operation. These diodes are suitable for various electronic circuits requiring fast response times and low power loss.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Origin: China
  • Material Compliance: RoHS requirements
  • Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix)

Technical Specifications

SymbolParameterMin.Typ.Max.UnitDeviceMarkingOrder Information
VBRReverse Breakdown Voltage (IR = 10Adc)30--VLBAT54BST1GR8000/Tape&Reel
LBAT54BST3GT10000/Tape&Reel
LBAT54BST5GS5000/Tape&Reel
S-LBAT54BST5GS5000/Tape&Reel
CTDiode Capacitance (VR =1.0V , f = 1.0 MHz)-7.610pFAllAllAll
IRReverse Voltage Leakage Current (VR = 25Vdc)-0.52A
VFForward Voltage (IF = 10 mAdc)-0.35-V
trrReverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)--5ns
IFForward Current (DC)--200mA
IFRMRepetitive Peak Forward Current--300mA
IFSMNonRepetitive Peak Forward Current (t < 1.0 s)--600mA
PDTotal Device Dissipation, FR5 Board (Note 1) @ TA = 25C-400-mWFR5 Board (Note 1)
Derate above 25C--3.2mW/CFR5 Board (Note 1)
RJAThermal Resistance, JunctiontoAmbient--250C/WFR5 Board (Note 1)
TJJunction Temperature--125C
TstgStorage temperature-55-+150
VRReverse Voltage--30Vdc

1912111437_LRC-LBAT54BST5G_C383179.pdf

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