Low RDS ON P Channel 60V MOSFET LRC LP2309LT1G suitable for power management in notebooks and DSCs
Key Attributes
Model Number:
LP2309LT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
358pF@30V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.3nC@4.5V
Mfr. Part #:
LP2309LT1G
Package:
SOT-23(TO-236)
Product Description
Product Overview
The LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in notebooks, portable equipment, battery-powered systems, DC/DC converters, load switches, DSCs, and LCD display inverters. The material complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS, Halogen Free
Technical Specifications
| Model | Type | Voltage (VDSS) | Marking | Package | Shipping |
|---|---|---|---|---|---|
| LP2309LT1G | P-Channel | 60V | P09 | SOT23(TO-236) | 3000/Tape&Reel |
| LP2309LT3G | P-Channel | 60V | P09 | SOT23(TO-236) | 10000/Tape&Reel |
| Symbol | Parameter | Unit | Min. | Typ. | Max. | Conditions |
|---|---|---|---|---|---|---|
| VBRDSS | DrainSource Breakdown Voltage | V | -60 | VGS = 0, ID = -250A | ||
| VGS(th) | Gate Threshold Voltage | V | -1.9 | -1.5 | -7.6 | VDS = VGS, ID = -250A |
| IGSS | Gate Leakage Current | nA | 100 | VDS =0V, VGS =20V | ||
| IDSS | Zero Gate Voltage Drain Current | A | -1 | -10 | VGS = 0V, VDS = -60 V | |
| RDS(on) | Static DrainSource OnState Resistance | m | 215 | VGS = -10 V, ID = -1.8 A | ||
| 260 | VGS = -4.5 V, ID = -1.4 A | |||||
| VSD | Forward Voltage | V | -1.2 | VGS = 0 V, IS = -1.2 A | ||
| Qg | Total Gate Charge | nC | 33.1 | VGS = -4.5 V, ID =-1A,VDS= -48 V | ||
| Qgs | Gate-Source Charge | nC | 5.2 | VGS = -4.5 V, ID =-1A,VDS= -48 V | ||
| Qgd | Gate-Drain Charge | nC | 2.3 | VGS = -4.5 V, ID =-1A,VDS= -48 V | ||
| Ciss | Input Capacitance | pF | 170 | VGS = 0 V, f = 1.0MHz,VDS= -30 V | ||
| Coss | Output Capacitance | pF | 17 | VGS = 0 V, f = 1.0MHz,VDS= -30 V | ||
| Crss | Reverse Transfer Capacitance | pF | 17 | VGS = 0 V, f = 1.0MHz,VDS= -30 V | ||
| td(on) | Turn-On Delay Time | ns | 20 | (VDS = -30V, RL= 30 , ID = -1A, VGS = -10V, RG = 3.3 ) | ||
| tr | Rise Time | ns | 260 | (VDS = -30V, RL= 30 , ID = -1A, VGS = -10V, RG = 3.3 ) | ||
| td(off) | Turn-Off Delay Time | ns | 358 | (VDS = -30V, RL= 30 , ID = -1A, VGS = -10V, RG = 3.3 ) | ||
| tf | Fall Time | ns | 200 | (VDS = -30V, RL= 30 , ID = -1A, VGS = -10V, RG = 3.3 ) |
| Symbol | Parameter | Ta=25 | Ta=70 | Unit | Note |
|---|---|---|---|---|---|
| PD | Maximum Power Dissipation | 1.4 | 0.9 | W | 1 |
| ID | Continuous Drain Current | -1.9 | -1.5 | A | 1 |
| IDM | Pulsed Drain Current | -7.6 | A | Steady State t10s | |
| RJC | Thermal Resistance-Junction to Case | 90 | /W | 1 | |
| RJA | Thermal Resistance-Junction to Ambient | 170 | 150 | /W | 1 |
| Tj | Junction Temperature | 170 | |||
| Tstg | Storage Temperature Range | -55~+150 |
Note 1: The device mounted on 1in FR4 board with 2 oz copper.
1912111437_LRC-LP2309LT1G_C383253.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
