Bias Resistor Transistor Silicon PNP LRC S-LDTB114ELT1G for Automotive Interface and Driver Applications
Key Attributes
Model Number:
S-LDTB114ELT1G
Product Custom Attributes
Output Voltage(VO(on)):
300mV@50mA,2.5mA
Input Resistor:
10kΩ
Resistor Ratio:
1
Mfr. Part #:
S-LDTB114ELT1G
Package:
SOT-23
Product Description
Product Overview
The LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor (S-LDTB114ELT1G, LDTB114ELT1G, S-LDTB114ELT3G) is designed for inverter, interface, and driver applications. It features monolithic bias resistors, simplifying circuit design by eliminating the need for external input resistors. These thin-film resistors offer complete isolation and minimize parasitic effects, enabling easy configuration of inverter circuits with only on/off condition settings. The S-prefix variants are AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Material: Silicon
- Package Type: SOT-23
- Certifications: AEC-Q101 Qualified and PPAP Capable (S-prefix models)
- Compliance: RoHS requirements
Technical Specifications
| Parameter | Symbol | Unit | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25C) | ||||||
| Supply voltage | VCC | V | -50 | |||
| Input voltage | VIN | V | -40 | to +10 | ||
| Output current | IC | mA | -500 | |||
| Power dissipation | PD | mW | 200 | |||
| Junction temperature | Tj | C | 150 | |||
| Storage temperature | Tstg | C | -55 | to +150 | ||
| Electrical Characteristics (Ta=25C) | ||||||
| Input voltage (OFF) | VI(off) | V | VCC= -5V, IO= -100A | -3 | ||
| Input voltage (ON) | VI(on) | V | VO= -0.3V, IO= -10mA | -0.5 | ||
| Output voltage (ON) | VO(on) | V | IO/II= -50mA/-2.5mA | -0.1 | ||
| Input current | II | A | VI= -5V | -0.5 | ||
| Output current | IO | mA | VCC= -50V, VI=0V | -0.1 | ||
| Input resistance | R1 | k | VO= -5V, IO= -50mA | 7 | 10 | |
| DC current gain | GI | VCE= -10V, IE=50mA, f=100MHz | 56 | 200 | ||
| Resistance ratio | R2/R1 | 0.88 | 1 | 1.2 | ||
| Transition frequency | fT | MHz | 13 | |||
| Device Marking and Resistor Values | ||||||
| Device Marking | R1 (K) | R2 (K) | Shipping | |||
| F14 | 10 | 10 | 3000/Tape & Reel | |||
| F14 | 10 | 10 | 10000/Tape & Reel | |||
| Models | ||||||
| Model | Device Marking | R1 (K) | R2 (K) | Shipping | ||
| LDTB114ELT1G | F14 | 10 | 10 | 3000/Tape & Reel | ||
| S-LDTB114ELT1G | F14 | 10 | 10 | 10000/Tape & Reel | ||
| LDTB114ELT3G | F14 | 10 | 10 | 10000/Tape & Reel | ||
| Outline and Dimensions (SOT-23) | ||||||
| Dimension | Symbol | Min | Nor | Max | Unit | |
| A | 0.89 | 1.12 | mm | |||
| A1 | 0.01 | 0.10 | mm | |||
| A2 | 0.88 | 0.95 | 1.02 | mm | ||
| b | 0.30 | 0.50 | mm | |||
| b1 | 0.30 | 0.40 | 0.45 | mm | ||
| c | 0.08 | 0.20 | mm | |||
| c1 | 0.08 | 0.10 | 0.16 | mm | ||
| D | 2.80 | 2.90 | 3.04 | mm | ||
| E | 2.10 | 2.64 | mm | |||
| E1 | 1.20 | 1.30 | 1.40 | mm | ||
| e | 0.95BSC | mm | ||||
| e1 | 1.90BSC | mm | ||||
| L | 0.40 | 0.46 | 0.60 | mm | ||
| L1 | 0.54REF | mm | ||||
| 0 | 8 | |||||
2503171710_LRC-S-LDTB114ELT1G_C44457940.pdf
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