N Channel Power Trench MOSFET LRC LN7910DT1WG Designed for Low RDSon DC DC Conversion Applications
Key Attributes
Model Number:
LN7910DT1WG
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
60A
RDS(on):
15mΩ@6V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF@75V
Number:
1 N-channel
Output Capacitance(Coss):
256pF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.407nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
LN7910DT1WG
Package:
DFN-8(5x6)
Product Description
Product Overview
The LN7910DT1WG is an N-Channel Power Trench MOSFET designed for DC-DC conversion applications. It features an advanced package and silicon combination for low RDS(on) and high efficiency. The product complies with RoHS requirements and is Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: LN7910DT1WG
- Material Compliance: RoHS, Halogen Free
- Package Type: DFN5060-8B
- Transistor Type: N-Channel Power Trench MOSFET
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | - | - | 150 | V | |
| Gate-to-Source Voltage | VGS | - | - | ±20 | V | |
| Pulsed Drain Current | IDM | - | - | 60 | A | TC=25 |
| Continuous Drain Current | ID | - | 12.4 | - | A | TC=25 |
| Continuous Drain Current | ID | - | 11 | - | A | TC=75 |
| Avalanche Energy (L=0.1mH) | EAS | - | - | 39.2 | mJ | |
| Avalanche Current (L=0.1mH) | IAS | - | 28 | - | A | |
| Power Dissipation | PD | - | 2.5 | - | W | TC=25 |
| Power Dissipation | PD | - | 1.2 | - | W | TC=75 |
| Junction-to-Ambient Thermal Resistance | RJA | - | 50 | - | /W | |
| Junction-to-Case Thermal Resistance | RJC | - | - | - | /W | |
| Operating Junction and Storage Temperature Range | Tj/Tstg | -55 | - | +150 | ||
| Drain to Source Breakdown Voltage | BVDSS | 150 | - | - | V | (VGS =0V, ID =250A) |
| Drain-to-Source Leakage Current | IDSS | - | - | 3407 | nA | (VDS =120V, VGS =0V) |
| Gate-Body leakage current | IGSS | - | - | ±100 | uA | (VDS =0V, VGS = ±20V) |
| Gate Threshold Voltage | VGS(th) | 2 | - | 4 | V | (VDS = VGS , ID = 250A) |
| Drain-to-Source On-Resistance | RDS(ON) | - | 11.5 | - | m | (VGS = 10 V, ID = 15 A) |
| Drain-to-Source On-Resistance | RDS(ON) | - | - | 256 | m | (VGS = 6 V, ID = 7 A) |
| Gate Resistance | Rg | - | 2.8 | - | ||
| Total Gate Charge | Qg | - | 42 | - | nC | (VDS=75V,VGS=10V,ID=20A) |
| Gate to Source Charge | Qgs | - | - | - | nC | |
| Gate to Drain Charge | Qgd | - | - | - | nC | |
| Turn-on Delay Time | td(on) | - | - | - | nS | (VDD = 75V, ID = 7.5A, RG = 10 ,VGS = 10V) |
| Rise Time | tr | - | - | - | nS | |
| Turn-Off Delay Time | td(off) | - | - | - | nS | |
| Fall Time | tf | - | - | - | nS | |
| Input Capacitance | Ciss | - | 256 | - | pF | (VGS = 0V ,VDS = 75V, f = 1MHz) |
| Output Capacitance | Coss | - | 72 | - | pF | (VGS = 0V ,VDS = 75V, f = 1MHz) |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | (VGS = 0V ,VDS = 75V, f = 1MHz) |
| Diode Forward Voltage | VSD | - | - | - | V | (VGS = 0 V, IS = 20 A) |
Device Marking: LN7910DT1WG, LN7910
Shipping: 3000/Tape&Reel
Outline and Dimensions (DFN5060-8B):
| DIM | MIN | NOR | MAX |
|---|---|---|---|
| A | 0.90 | 1.00 | 1.10 |
| A1 | 0.00 | 0.02 | 0.05 |
| E | 6.00 | 6.15 | 6.30 |
| E1 | 5.66 | 5.76 | 5.86 |
| E2 | 3.40 | 3.50 | 3.60 |
| D | 4.95 | 5.10 | 5.25 |
| D1 | 4.80 | 4.90 | 5.00 |
| D2 | 3.76 | 3.86 | 3.96 |
| b | 0.30 | 0.35 | 0.40 |
| B | 0.36 | 0.41 | 0.46 |
| L | 0.56 | 0.66 | 0.76 |
| e | 1.27BSC | ||
| c | 0.254REF. | ||
2410010403_LRC-LN7910DT1WG_C2936692.pdf
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