Power Management P N Channel Mosfet LRC LNP4606T1G Halogen Free and RoHS Compliant for Power Routing
Product Overview
The LNP4606T1G is a P & N-Channel 30-V (D-S) MOSFET designed for high-efficiency applications. It features low RDS(on) for extended battery life, low thermal impedance, and fast switching speeds, leveraging high-performance trench technology. This MOSFET is suitable for power routing, DC/DC conversion, and motor drive applications. The material is Halogen Free and compliant with RoHS requirements.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material: Halogen Free
- Compliance: RoHS
- Device Type: P & N-Channel MOSFET
- Package Type: SOP8
- Marking: LNP4606T1G
- Shipping: 4606 4000/Tape&Reel
Technical Specifications
| Parameter | Symbol | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
|---|---|---|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta = 25C) | |||||||||
| DraintoSource Voltage | VDS | 30 | V | -30 | V | ||||
| GatetoSource Voltage | VGS | 20 | V | 20 | V | ||||
| Operating Junction and Storage Temperature Range | TJ , TSTG | -55 | 150 | C | -55 | 150 | C | ||
| Continuous Drain Current (Note 1) TA =25C | ID | 4.8 | A | -6 | A | ||||
| Continuous Drain Current (Note 1) TA =70C | ID | 2.1 | A | -4.5 | A | ||||
| Pulsed Drain Current (Note 2) | IDM | 28 | A | -25 | A | ||||
| Power Dissipation (Note 1) TA =25C | PD | 2.1 | W | 1.3 | W | ||||
| Power Dissipation (Note 1) TA =70C | PD | 1.3 | W | - | W | ||||
| THERMAL CHARACTERISTICS | |||||||||
| Thermal Resistance, JunctiontoAmbient (Note 1) Steady State | RJA | 62.5 | /W | 110 | /W | ||||
| P-ELECTRICAL CHARACTERISTICS (Ta= 25C) | |||||||||
| DrainSource Breakdown Voltage | VBRDSS | -30 | V | 30 | V | ||||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -3 | V | 1 | 3 | V | ||
| Gate-Body Leakage Current | IGSS | 1 | A | 10 | A | ||||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | 1 | A | ||||
| Drain-Source On-Resistance | RDS(ON) | 18.7 | m | 26 | 34 | m | |||
| (VGS = -10 V, ID = -5 A) | 27.7 | m | |||||||
| (VGS = -4.5 V, ID = -4 A) | 39 | m | |||||||
| (VGS = 10 V, ID = 6 A) | 36 | 52 | m | ||||||
| (VGS = 4.5 V, ID = 5 A) | 12 | m | |||||||
| Total Gate Charge | Qg(10V) | 7.5 | nC | 3.7 | nC | ||||
| Total Gate Charge | Qg(4.5V) | 5.7 | nC | ||||||
| Gate-Source Charge | Qgs | 3.3 | nC | 3 | nC | ||||
| Gate-Drain Charge | Qgd | 2.7 | nC | 2 | nC | ||||
| Input Capacitance | Ciss | 664 | pF | 370 | pF | ||||
| Output Capacitance | Coss | 90 | pF | 68 | pF | ||||
| Reverse Transfer Capacitance | Crss | 81 | pF | 21 | pF | ||||
| Turn-On Delay Time | td(on) | - | - | ns | - | - | ns | ||
| Rise Time | tr | - | - | ns | - | - | ns | ||
| Turn-Off Delay Time | td(off) | - | - | ns | - | - | ns | ||
| Fall Time | tf | - | - | ns | - | - | ns | ||
| Diode Forward Voltage | VSD | -0.77 | -1 | V | -0.8 | -1.2 | V | ||
| Gate Resistance | Rg | 6.9 | - | - | |||||
| OUTLINE AND DIMENSIONS | |||||||||
| Dimension | MIN | NOM | MAX | Unit | |||||
| A | - | - | 1.75 | mm | |||||
| A1 | 0.10 | 0.15 | 0.20 | mm | |||||
| A2 | 1.35 | 1.45 | 1.55 | mm | |||||
| b | 0.33 | 0.42 | 0.51 | mm | |||||
| c | 0.15 | 0.22 | 0.29 | mm | |||||
| D | 4.77 | 4.90 | 5.03 | mm | |||||
| E | 5.80 | 6.00 | 6.20 | mm | |||||
| E1 | 3.80 | 3.90 | 4.00 | mm | |||||
| e | - | 1.27BSC | - | mm | |||||
| L | 0.46 | 0.66 | 0.86 | mm | |||||
| L1 | 0.85 | 1.05 | 1.25 | mm | |||||
| 0 | 5 | 8 | |||||||
| B | - | - | 0.55 | mm | |||||
| H | 0 | 0.05 | 0.10 | mm | |||||
| SOLDERING FOOTPRINT | |||||||||
| DIM (mm) | X | Y | C1 | C2 | |||||
| SOP8 | 0.60 | 1.55 | 5.40 | 1.27 | |||||
2202171630_LRC-LNP4606T1G_C2976619.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.