Power Management P N Channel Mosfet LRC LNP4606T1G Halogen Free and RoHS Compliant for Power Routing

Key Attributes
Model Number: LNP4606T1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
81pF
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
664pF
Output Capacitance(Coss):
90pF
Gate Charge(Qg):
18.7nC@10V
Mfr. Part #:
LNP4606T1G
Package:
SOP-8
Product Description

Product Overview

The LNP4606T1G is a P & N-Channel 30-V (D-S) MOSFET designed for high-efficiency applications. It features low RDS(on) for extended battery life, low thermal impedance, and fast switching speeds, leveraging high-performance trench technology. This MOSFET is suitable for power routing, DC/DC conversion, and motor drive applications. The material is Halogen Free and compliant with RoHS requirements.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material: Halogen Free
  • Compliance: RoHS
  • Device Type: P & N-Channel MOSFET
  • Package Type: SOP8
  • Marking: LNP4606T1G
  • Shipping: 4606 4000/Tape&Reel

Technical Specifications

Parameter Symbol N-Channel Min. N-Channel Typ. N-Channel Max. N-Channel Unit P-Channel Min. P-Channel Typ. P-Channel Max. P-Channel Unit
MAXIMUM RATINGS (Ta = 25C)
DraintoSource Voltage VDS 30 V -30 V
GatetoSource Voltage VGS 20 V 20 V
Operating Junction and Storage Temperature Range TJ , TSTG -55 150 C -55 150 C
Continuous Drain Current (Note 1) TA =25C ID 4.8 A -6 A
Continuous Drain Current (Note 1) TA =70C ID 2.1 A -4.5 A
Pulsed Drain Current (Note 2) IDM 28 A -25 A
Power Dissipation (Note 1) TA =25C PD 2.1 W 1.3 W
Power Dissipation (Note 1) TA =70C PD 1.3 W - W
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoAmbient (Note 1) Steady State RJA 62.5 /W 110 /W
P-ELECTRICAL CHARACTERISTICS (Ta= 25C)
DrainSource Breakdown Voltage VBRDSS -30 V 30 V
Gate-Source Threshold Voltage VGS(th) -1 -3 V 1 3 V
Gate-Body Leakage Current IGSS 1 A 10 A
Zero Gate Voltage Drain Current IDSS -1 A 1 A
Drain-Source On-Resistance RDS(ON) 18.7 m 26 34 m
(VGS = -10 V, ID = -5 A) 27.7 m
(VGS = -4.5 V, ID = -4 A) 39 m
(VGS = 10 V, ID = 6 A) 36 52 m
(VGS = 4.5 V, ID = 5 A) 12 m
Total Gate Charge Qg(10V) 7.5 nC 3.7 nC
Total Gate Charge Qg(4.5V) 5.7 nC
Gate-Source Charge Qgs 3.3 nC 3 nC
Gate-Drain Charge Qgd 2.7 nC 2 nC
Input Capacitance Ciss 664 pF 370 pF
Output Capacitance Coss 90 pF 68 pF
Reverse Transfer Capacitance Crss 81 pF 21 pF
Turn-On Delay Time td(on) - - ns - - ns
Rise Time tr - - ns - - ns
Turn-Off Delay Time td(off) - - ns - - ns
Fall Time tf - - ns - - ns
Diode Forward Voltage VSD -0.77 -1 V -0.8 -1.2 V
Gate Resistance Rg 6.9 - -
OUTLINE AND DIMENSIONS
Dimension MIN NOM MAX Unit
A - - 1.75 mm
A1 0.10 0.15 0.20 mm
A2 1.35 1.45 1.55 mm
b 0.33 0.42 0.51 mm
c 0.15 0.22 0.29 mm
D 4.77 4.90 5.03 mm
E 5.80 6.00 6.20 mm
E1 3.80 3.90 4.00 mm
e - 1.27BSC - mm
L 0.46 0.66 0.86 mm
L1 0.85 1.05 1.25 mm
0 5 8
B - - 0.55 mm
H 0 0.05 0.10 mm
SOLDERING FOOTPRINT
DIM (mm) X Y C1 C2
SOP8 0.60 1.55 5.40 1.27

2202171630_LRC-LNP4606T1G_C2976619.pdf

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