Surface mount digital transistor LRC S-LMUN2133LT1G with monolithic bias network and consumption design

Key Attributes
Model Number: S-LMUN2133LT1G
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
0.47
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN2133LT1G
Package:
SOT-23
Product Description

Product Overview

This series of digital transistors, known as Bias Resistor Transistors (BRTs), integrates a single transistor with a monolithic bias network of two resistors (base and base-emitter) into a single SOT-23 surface-mount package. This integration simplifies circuit design, reduces board space, and lowers component count. These PNP silicon transistors are designed for low-power surface mount applications and can be soldered using wave or reflow methods, with modified gull-winged leads to absorb thermal stress. They are available on 8 mm embossed tape and reel, with specific device numbers determining reel size and unit count. The 'S-' prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material Compliance: RoHS requirements and Halogen Free.
  • Qualification: AEC-Q101 Qualified (for 'S-' prefix devices)
  • Package: SOT-23
  • Tape & Reel: Available in 8 mm embossed tape and reel (7 inch/3000 unit reel or 13 inch/10,000 unit reel).

Technical Specifications

Series Device Number Package Marking R1 (k) R2 (k) Shipping
S-LMUN2110LT1G Series S-LMUN2110LT1G A6A 10 10 3000/Tape & Reel
S-LMUN2110LT3G A6A 10 10 10,000/Tape & Reel
S-LMUN2111LT1G A6O 47 8 3000/Tape & Reel
S-LMUN2111LT3G A6O 47 8 10,000/Tape & Reel
S-LMUN2112LT1G A6B 22 22 3000/Tape & Reel
S-LMUN2112LT3G A6B 22 22 10,000/Tape & Reel
S-LMUN2113LT1G A6C 47 47 3000/Tape & Reel
S-LMUN2113LT3G A6C 47 47 10,000/Tape & Reel
S-LMUN2114LT1G A6D 10 47 3000/Tape & Reel
S-LMUN2114LT3G A6D 10 47 10,000/Tape & Reel
S-LMUN2115LT1G A6E 10 8 3000/Tape & Reel
S-LMUN2115LT3G A6E 10 8 10,000/Tape & Reel
S-LMUN2116LT1G A6F 4.7 8 3000/Tape & Reel
S-LMUN2116LT3G A6F 4.7 8 10,000/Tape & Reel
S-LMUN2130LT1G (Note 3.) A6G 1.0 1.0 3000/Tape & Reel
S-LMUN2130LT3G (Note 3.) A6G 1.0 1.0 10,000/Tape & Reel
S-LMUN2131LT1G A6H 2.2 2.2 3000/Tape & Reel
S-LMUN2131LT3G A6H 2.2 2.2 10,000/Tape & Reel
S-LMUN2132LT1G A6J 4.7 4.7 3000/Tape & Reel
S-LMUN2132LT3G A6J 4.7 4.7 10,000/Tape & Reel
S-LMUN2133LT1G A6K 4.7 47 3000/Tape & Reel
S-LMUN2133LT3G A6K 4.7 47 10,000/Tape & Reel
S-LMUN2134LT1G (Note 3.) A6L 22 47 3000/Tape & Reel
S-LMUN2134LT3G (Note 3.) A6L 22 47 10,000/Tape & Reel
S-LMUN2136LT1G A6N 100 100 3000/Tape & Reel
S-LMUN2136LT3G A6N 100 100 10,000/Tape & Reel
S-LMUN2137LT1G A6P 47 22 3000/Tape & Reel
S-LMUN2137LT3G A6P 47 22 10,000/Tape & Reel
S-LMUN2138LT1G (Note 3.) A6R 2.2 8 3000/Tape & Reel
S-LMUN2138LT3G (Note 3.) A6R 2.2 8 10,000/Tape & Reel
S-LMUN2140LT1G (Note 3.) A6T 47 8 3000/Tape & Reel
S-LMUN2140LT3G (Note 3.) A6T 47 8 10,000/Tape & Reel
Maximum Ratings (TA = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Collector Current IC -100 mA
Thermal Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1.) PD 246 mW
Derate above 25C (Note 1.) 1.5 C/W
Total Device Dissipation (Note 2.) PD 400 mW
Derate above 25C (Note 2.) 2.0 C/W
Thermal Resistance Junction-to-Ambient (Note 1.) RJA 508 C/W
Thermal Resistance Junction-to-Ambient (Note 2.) RJA 311 C/W
Thermal Resistance Junction-to-Lead (Note 1.) RJL 174 C/W
Thermal Resistance Junction-to-Lead (Note 2.) RJL 208 C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 C
Notes: 1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad
Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DC Current Gain (V CE = -10 V, IC =- 5.0 mA) hFE 35 60 80
Collector-Emitter Saturation Voltage (IC =- 10 mA, IB =- 0.3 mA) VCE(sat) - - -0.25 V
Collector-Emitter Saturation Voltage (IC =- 10 mA, IB =- 5 mA) VCE(sat) - - -0.2 V
Collector-Emitter Saturation Voltage (IC =- 10 mA, IB =- 1 mA) VCE(sat) - - -0.2 V
Collector-Base Cutoff Current (VCB = -50 V, IE = 0) ICBO - - -100 nA
Collector-Emitter Cutoff Current (VCE = -50 V, IB = 0) ICEO - - -500 nA
Emitter-Base Cutoff Current (VEB = -6.0 V, IC = 0) IEBO -0.5 -0.1 -0.2 mA
Collector-Base Breakdown Voltage (IC = -10A, IE = 0) V(BR)CBO -50 - - V
Collector-Emitter Breakdown Voltage (Note 4.) (IC =- 2.0 mA, IB = 0) V(BR)CEO -50 - - V
Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL = 1.0 k) VOL -0.2 - - V
Output Voltage (off) (VCC = -5.0 V, VB = -0.5 V, RL = 1.0 k) VOH -4.9 - - V
Input Resistor R1 R1 7.0 15.4 32.9 k
Resistor Ratio R1/R2 R1/R2 0.8 0.17 -

Notes: 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%


2409302231_LRC-S-LMUN2133LT1G_C5273274.pdf

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