Surface Mount Zener Diode luJing ZMM55C3V3 Featuring Low Reverse Current and LL34 Glass Case Design
Key Attributes
Model Number:
ZMM55C3V3
Product Custom Attributes
Mfr. Part #:
ZMM55C3V3
Package:
LL-34
Product Description
Product Overview
The ZMM55C series are surface mount Zener diodes designed for various electronic applications. They offer low reverse leakage, low Zener impedance, and high stability and reliability. These diodes are available in the LL34 glass case and are suitable for any mounting position.
Product Attributes
- Case Type: LL34 Glass Case
- Polarity: Color band denotes cathode end
Technical Specifications
| Type | Zener Voltage (Vz) MIN | Zener Voltage (Vz) MAX | Test Current (Iz) | Max. Reverse Current (IR) | Test Condition (IR) | Max. Dynamic Resistance (rd) | Test Condition (rd) | Max. VR | Max. Iz |
|---|---|---|---|---|---|---|---|---|---|
| ZMM55C2V0 | 1.80 | 2.15 | 5.0 mA | 100 µA | - | 1.0 Ω | - | - | - |
| ZMM55C2V2 | 2.08 | 2.33 | 5.0 mA | 75 µA | - | 1.0 Ω | - | - | - |
| ZMM55C2V4 | 2.28 | 2.56 | 5.0 mA | 50 µA | - | 1.0 Ω | - | - | - |
| ZMM55C2V7 | 2.50 | 2.90 | 5.0 mA | 10 µA | - | 1.0 Ω | - | - | - |
| ZMM55C3V0 | 2.80 | 3.20 | 5.0 mA | 4 µA | - | 1.0 Ω | - | - | - |
| ZMM55C3V3 | 3.10 | 3.50 | 5.0 mA | 2 µA | - | 1.0 Ω | - | - | - |
| ZMM55C3V6 | 3.4 | 3.8 | 5.0 mA | 2 µA | - | 1.0 Ω | - | - | - |
| ZMM55C3V9 | 3.7 | 4.1 | 5.0 mA | 2 µA | - | 1.0 Ω | - | - | - |
| ZMM55C4V3 | 4 | 4.6 | 5.0 mA | 1 µA | - | 1.0 Ω | - | 75 V | 5.0 mA |
| ZMM55C4V7 | 4.4 | 5 | 5.0 mA | 0.5 µA | - | 1.0 Ω | - | 60 V | 5.0 mA |
| ZMM55C5V1 | 4.8 | 5.4 | 5.0 mA | 0.1 µA | - | 1.0 Ω | - | 35 V | 5.0 mA |
| ZMM55C5V6 | 5.2 | 6 | 5.0 mA | 0.1 µA | - | 1.0 Ω | - | 25 V | 5.0 mA |
| ZMM55C6V2 | 5.8 | 6.6 | 5.0 mA | 0.1 µA | - | 2.0 Ω | - | 10 V | 5.0 mA |
| ZMM55C6V8 | 6.4 | 7.2 | 5.0 mA | 0.1 µA | - | 3.0 Ω | - | 8 V | 5.0 mA |
| ZMM55C7V5 | 7 | 7.9 | 5.0 mA | 0.1 µA | - | 5.0 Ω | - | 7 V | 5.0 mA |
| ZMM55C8V2 | 7.7 | 8.7 | 5.0 mA | 0.1 µA | - | 6.2 Ω | - | 7 V | 5.0 mA |
| ZMM55C9V1 | 8.5 | 9.6 | 5.0 mA | 0.1 µA | - | 6.8 Ω | - | 10 V | 5.0 mA |
| ZMM55C10 | 9.4 | 10.6 | 5.0 mA | 0.1 µA | - | 7.5 Ω | - | 15 V | 5.0 mA |
| ZMM55C11 | 10.4 | 11.6 | 5.0 mA | 0.1 µA | - | 8.2 Ω | - | 20 V | 5.0 mA |
| ZMM55C12 | 11.4 | 12.7 | 5.0 mA | 0.1 µA | - | 9.1 Ω | - | 20 V | 5.0 mA |
| ZMM55C13 | 12.4 | 14.1 | 5.0 mA | 0.1 µA | - | 10.0 Ω | - | 26 V | 5.0 mA |
| ZMM55C14 | 13.3 | 14.7 | 5.0 mA | 0.1 µA | - | 10.0 Ω | - | 26 V | 5.0 mA |
| ZMM55C15 | 13.8 | 15.6 | 5.0 mA | 0.1 µA | - | 11.0 Ω | - | 30 V | 5.0 mA |
| ZMM55C16 | 15.3 | 17.1 | 5.0 mA | 0.1 µA | - | 12.0 Ω | - | 40 V | 5.0 mA |
| ZMM55C18 | 16.8 | 19.1 | 5.0 mA | 0.1 µA | - | 13.0 Ω | - | 50 V | 5.0 mA |
| ZMM55C20 | 18.8 | 21.2 | 5.0 mA | 0.1 µA | - | 15.0 Ω | - | 55 V | 5.0 mA |
| ZMM55C22 | 20.8 | 23.3 | 5.0 mA | 0.1 µA | - | 16.0 Ω | - | 55 V | 5.0 mA |
| ZMM55C24 | 22.8 | 25.6 | 5.0 mA | 0.1 µA | - | 18.0 Ω | - | 80 V | 5.0 mA |
| ZMM55C27 | 25.1 | 28.9 | 5.0 mA | 0.1 µA | - | 20.0 Ω | - | 80 V | 5.0 mA |
| ZMM55C30 | 28 | 32 | 5.0 mA | 0.1 µA | - | 22.0 Ω | - | 80 V | 5.0 mA |
| ZMM55C33 | 31 | 35 | 5.0 mA | 0.1 µA | - | 24.0 Ω | - | 80 V | 5.0 mA |
| ZMM55C36 | 34 | 38 | 5.0 mA | 0.1 µA | - | 27.0 Ω | - | 80 V | 5.0 mA |
| ZMM55C39 | 37 | 41 | 2.5 mA | 0.1 µA | - | 30.0 Ω | - | 2.5 V | 90 mA |
Maximum Ratings and Characteristics
- Power Dissipation (Pd): 500 mW
- Operating Junction Temperature (Tj): 175 °C
- Storage Temperature Range (Ts): -55 to +175 °C
- Note 1: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
- Note 1: MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified.
- Note 2: Tested with pulses tp=20ms
- Note 3: VF(MAX)=1.20V@IF=100Ma
- Note 4: The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.
- Note 5: These diodes are also available in DO-35 case with the type designation BZX55C….
2512021845_luJing-ZMM55C3V3_C53058776.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
