100V N Channel Enhancement Mode MOSFET LRC LN2292LT1G with Low On Resistance and High Current Rating
Key Attributes
Model Number:
LN2292LT1G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@4.5V,1A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
19.6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
501pF@25V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.8nC@5V
Mfr. Part #:
LN2292LT1G
Package:
SOT-23E
Product Description
Product Overview
The LN2292LT1G is a 100V N-Channel Enhancement-Mode MOSFET from Leshan Radio Company, LTD. It features a super high density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in notebooks, DC/DC converters, and load switch applications. The product complies with RoHS requirements and is Halogen Free.Product Attributes
- Brand: Leshan Radio Company, LTD.
- Model: LN2292LT1G
- Material Compliance: RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 100 | V |
| Gate-Source Voltage Continuous | VGS | - | - | ±20 | V |
| Drain Current - Continuous | ID | - | - | 3 | A |
| Drain Current - Pulsed | IDM | - | - | 10 | A |
| Maximum Power Dissipation | PD | - | - | 1.25 | W |
| Thermal Resistance, JunctiontoAmbient | RΘJA | - | - | 100 | °C/W |
| Junction and Storage Temperature | TJ,Tstg | -55 | - | +150 | °C |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | 1.0 | - | 3.0 | V |
| GateBody Leakage | IGSS | - | - | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | µA |
| Static DrainSource OnState Resistance | RDS(on) | - | 160 | 200 | mΩ |
| Forward Voltage | VSD | - | 0.9 | 1.3 | V |
| Total Gate Charge | Qg | - | 5.8 | - | nC |
| Gate-Source Charge | Qgs | - | 2.0 | - | nC |
| Gate-Drain Charge | Qgd | - | 3.0 | - | nC |
| Input Capacitance | Ciss | - | 501 | - | pF |
| Output Capacitance | Coss | - | 24.3 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 19.6 | - | pF |
| Turn-On Delay Time | td(on) | - | 7.98 | - | ns |
| Rise Time | tr | - | 4.85 | - | ns |
| Turn-Off Delay Time | td(off) | - | 11.1 | - | ns |
| Fall Time | tf | - | 5.4 | - | ns |
| Device Marking: N2L | |||||
| Ordering Information: LN2292LT1G, 3000/Tape&Reel | |||||
2212131830_LRC-LN2292LT1G_C5273697.pdf
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