LRC S L2N7002KLT1G N Channel MOSFET with AEC Q101 Qualification and Halogen Free Material Compliance

Key Attributes
Model Number: S-L2N7002KLT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
RDS(on):
2.3Ω@10V,500mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
2.2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
34pF@25V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
360pC@10V
Mfr. Part #:
S-L2N7002KLT1G
Package:
SOT-23
Product Description

Product Overview

The L2N7002KLT1G and S-L2N7002KLT1G are N-Channel Small Signal MOSFETs designed for automotive and general applications. These devices offer RoHS and Halogen Free compliance, with the S-prefix variant specifically qualified for automotive use requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. They feature ESD protection, making them suitable for sensitive electronic assemblies.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS requirements and Halogen Free
  • Automotive Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
  • ESD Protection: Yes (2000 V HBM)
  • Package: SOT-23 (TO-236)

Technical Specifications

Parameter Symbol L2N7002KLT1G (RK) S-L2N7002KLT1G (RK) Unit Min. Typ. Max.
Maximum Ratings (Ta = 25C unless otherwise noted)
Drain-Source Voltage VDSS 60 Vdc - - -
Gate-Source Voltage VGS 20 Vdc - - -
Drain Current - Steady State ID 380 mAdc - - -
Pulsed Drain Current (tp=10s) IDM 1.5 A - - -
Source Current (Body Diode) IS 300 mA - - -
Total Device Dissipation (Note 1) PD 417 (t<5s) / 230 (Steady State) mW - - -
JunctiontoAmbient Thermal Resistance (Note 1) RJA 300 (t<5s) / 320 (Steady State) C/W - - -
Junction and Storage Temperature TJ, Tstg -55 ~ +150 C - - -
Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) TL 260 C - - -
Electrical Characteristics (Ta= 25C unless otherwise noted)
Drain-Source Breakdown Voltage VBRDSS 60 Vdc - - -
Drain-Source Breakdown Voltage Temperature Coefficient VBRDSS/TJ - mV/C - 71 -
Zero Gate Voltage Drain Current IDSS 100 (TJ=25C, VDS=60V) / 500 (TJ=125C, VDS=50V) Adc - - -
Gate-Source Leakage Current, Forward IGSSF - Adc - - 10
Gate-Source Leakage Current, Reverse IGSSR - Adc - - -10
Gate Threshold Voltage VGS(th) 1.0 Vdc - - -
Negative Threshold Temperature Coefficient VGS(TH)/TJ - mV/C - -1.4 -
Static Drain-Source On-State Resistance RDS(on) 2.2 (VGS=10V, ID=500mA) / 3.8 (VGS=5.0V, ID=50mA) Ohm - - -
Forward Transconductance gfs 80 mS - - -
Input Capacitance Ciss 34 pF - - -
Output Capacitance Coss 210 pF - - -
Reverse Transfer Capacitance Crss 360 pF - - -
Total Gate Charge Qg - pC - - -
Gate-Source Charge Qgs - pC - - -
Gate-Drain Charge Qgd - pC - - -
Turn-On Delay Time td(on) - ns - 2.3 -
Rise Time tr - ns - 2.5 -
Turn-Off Delay Time td(off) - ns - 19 -
Fall Time tf - ns - 12 -
Diode Forward On-Voltage VSD 0.7 (TJ=25C, IS=115mA) / 1.0 (TJ=85C) V - - -
Device Marking Marking L2N7002KLT1G: RK / S-L2N7002KLT1G: RK - - - -
Ordering Information L2N7002KLT1G (RK) S-L2N7002KLT1G (RK) 3000/Tape&Reel 10000/Tape&Reel
Package Type SOT23(TO-236) - - -
Dimensions (Unit: mm)
Dimension Symbol MIN NOM MAX
Body A 0.89 1.0 1.11
Body b 0.37 0.44 0.5
Body c 0.01 0.06 0.1
Body D 2.80 2.9 3.04
Body E 2.10 2.4 2.64
Lead Extension L 0.114 0.12 0.18
Lead Thickness L1 0.35 0.54 0.69
Height A1 0.001 0.004 0.005
Lead Width HE 1.78 1.9 2.04
Lead Pitch e 0.9 1 1.1

2305121418_LRC-S-L2N7002KLT1G_C5447802.pdf

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