LRC S L2N7002KLT1G N Channel MOSFET with AEC Q101 Qualification and Halogen Free Material Compliance
Product Overview
The L2N7002KLT1G and S-L2N7002KLT1G are N-Channel Small Signal MOSFETs designed for automotive and general applications. These devices offer RoHS and Halogen Free compliance, with the S-prefix variant specifically qualified for automotive use requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. They feature ESD protection, making them suitable for sensitive electronic assemblies.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Material Compliance: RoHS requirements and Halogen Free
- Automotive Qualification (S-prefix): AEC-Q101 qualified, PPAP capable
- ESD Protection: Yes (2000 V HBM)
- Package: SOT-23 (TO-236)
Technical Specifications
| Parameter | Symbol | L2N7002KLT1G (RK) | S-L2N7002KLT1G (RK) | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25C unless otherwise noted) | |||||||
| Drain-Source Voltage | VDSS | 60 | Vdc | - | - | - | |
| Gate-Source Voltage | VGS | 20 | Vdc | - | - | - | |
| Drain Current - Steady State | ID | 380 | mAdc | - | - | - | |
| Pulsed Drain Current (tp=10s) | IDM | 1.5 | A | - | - | - | |
| Source Current (Body Diode) | IS | 300 | mA | - | - | - | |
| Total Device Dissipation (Note 1) | PD | 417 (t<5s) / 230 (Steady State) | mW | - | - | - | |
| JunctiontoAmbient Thermal Resistance (Note 1) | RJA | 300 (t<5s) / 320 (Steady State) | C/W | - | - | - | |
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | C | - | - | - | |
| Lead Temperature for Soldering Purposes (1/8 " from case for 10 s) | TL | 260 | C | - | - | - | |
| Electrical Characteristics (Ta= 25C unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | VBRDSS | 60 | Vdc | - | - | - | |
| Drain-Source Breakdown Voltage Temperature Coefficient | VBRDSS/TJ | - | mV/C | - | 71 | - | |
| Zero Gate Voltage Drain Current | IDSS | 100 (TJ=25C, VDS=60V) / 500 (TJ=125C, VDS=50V) | Adc | - | - | - | |
| Gate-Source Leakage Current, Forward | IGSSF | - | Adc | - | - | 10 | |
| Gate-Source Leakage Current, Reverse | IGSSR | - | Adc | - | - | -10 | |
| Gate Threshold Voltage | VGS(th) | 1.0 | Vdc | - | - | - | |
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | - | mV/C | - | -1.4 | - | |
| Static Drain-Source On-State Resistance | RDS(on) | 2.2 (VGS=10V, ID=500mA) / 3.8 (VGS=5.0V, ID=50mA) | Ohm | - | - | - | |
| Forward Transconductance | gfs | 80 | mS | - | - | - | |
| Input Capacitance | Ciss | 34 | pF | - | - | - | |
| Output Capacitance | Coss | 210 | pF | - | - | - | |
| Reverse Transfer Capacitance | Crss | 360 | pF | - | - | - | |
| Total Gate Charge | Qg | - | pC | - | - | - | |
| Gate-Source Charge | Qgs | - | pC | - | - | - | |
| Gate-Drain Charge | Qgd | - | pC | - | - | - | |
| Turn-On Delay Time | td(on) | - | ns | - | 2.3 | - | |
| Rise Time | tr | - | ns | - | 2.5 | - | |
| Turn-Off Delay Time | td(off) | - | ns | - | 19 | - | |
| Fall Time | tf | - | ns | - | 12 | - | |
| Diode Forward On-Voltage | VSD | 0.7 (TJ=25C, IS=115mA) / 1.0 (TJ=85C) | V | - | - | - | |
| Device Marking | Marking | L2N7002KLT1G: RK / S-L2N7002KLT1G: RK | - | - | - | - | |
| Ordering Information | L2N7002KLT1G (RK) | S-L2N7002KLT1G (RK) | 3000/Tape&Reel | 10000/Tape&Reel | |||
| Package Type | SOT23(TO-236) | - | - | - | |||
| Dimensions (Unit: mm) | |||||||
| Dimension | Symbol | MIN | NOM | MAX | |||
| Body | A | 0.89 | 1.0 | 1.11 | |||
| Body | b | 0.37 | 0.44 | 0.5 | |||
| Body | c | 0.01 | 0.06 | 0.1 | |||
| Body | D | 2.80 | 2.9 | 3.04 | |||
| Body | E | 2.10 | 2.4 | 2.64 | |||
| Lead Extension | L | 0.114 | 0.12 | 0.18 | |||
| Lead Thickness | L1 | 0.35 | 0.54 | 0.69 | |||
| Height | A1 | 0.001 | 0.004 | 0.005 | |||
| Lead Width | HE | 1.78 | 1.9 | 2.04 | |||
| Lead Pitch | e | 0.9 | 1 | 1.1 | |||
2305121418_LRC-S-L2N7002KLT1G_C5447802.pdf
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