Power Management N Channel MOSFET LRC LN2306ELT1G with 30V Drain Source Voltage and SOT23 Package
Key Attributes
Model Number:
LN2306ELT1G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
400mΩ@1.7V,0.5A
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
5pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
247pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.7nC@4.5V
Mfr. Part #:
LN2306ELT1G
Package:
SOT-23
Product Description
Product Overview
The LN2306ELT1G is an N-Channel 30V(D-S) MOSFET designed for power management applications. It is suitable for use in notebook portable equipment, battery-powered systems, and load switching. This device is RoHS compliant and Halogen Free.
Product Attributes
- Brand: Leshan Radio Company, LTD.
- Product Type: N-Channel MOSFET
- Voltage Rating: 30V (Drain-Source)
- Package: SOT23 (TO-236)
- Compliance: RoHS, Halogen Free
- ESD Protection: Gate-Source ESD Protected
Technical Specifications
| Parameter | Symbol | Limits | Unit |
|---|---|---|---|
| DrainSource Voltage | VDSS | 30 | V |
| GatetoSource Voltage Continuous | VGS | 12 | V |
| Drain Current | ID | 3.4 | A |
| Pulsed Drain Current (Note 1) | IDM | 12 | A |
| Maximum Power Dissipation | PD | 1.4 | W |
| Thermal Resistance, JunctiontoAmbient (Note 2) | RJA | - | C/W |
| Junction and Storage temperature | TJ,Tstg | -55+150 | C |
| DrainSource Breakdown Voltage (VGS = 0, ID = 250A) | V(BR)DSS | 30 | V |
| Zero Gate Voltage Drain Current (VDS=30V, VGS=0V) | IDSS | - | A |
| GateBody Leakage Current, Forward (VDS = 0 V, VGS = 10 V) | IGSSF | - | A |
| GateBody Leakage Current, Reverse (VDS = 0 V, VGS = -10 V) | IGSSR | - | A |
| Gate Threshold Voltage (VDS = VGS, ID = 250A) | VGS(th) | 1.4 | V |
| Static DrainSource OnState Resistance (VGS = 10 V, ID =3.4 A) | RDS(on) | 65 | m |
| Static DrainSource OnState Resistance (VGS = 4.5 V, ID =2.7 A) | RDS(on) | 75 | m |
| Static DrainSource OnState Resistance (VGS = 2.5 V, ID = 1 A) | RDS(on) | 105 | m |
| Static DrainSource OnState Resistance (VGS = 1.7 V, ID = 0.5 A) | RDS(on) | 400 | m |
| Input Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Ciss | 247 | pF |
| Output Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Coss | 33 | pF |
| Reverse Transfer Capacitance (VGS = 0 V, f = 1.0MHz,VDS= 15 V) | Crss | 30 | pF |
| Turn-On Delay Time | td(on) | - | ns |
| Rise Time | tr | - | ns |
| Turn-Off Delay Time | td(off) | - | s |
| Fall Time | tf | - | ns |
| Forward Voltage (VGS = 0 V, ISD = 3.4 A) | VSD | 1.2 | V |
| Total Gate Charge (VGS = 4.5 V, ID=2.1A, VDS= 15 V) | Qg | 4.7 | nC |
| Gate-Source Charge (VGS = 4.5 V, ID=2.1A, VDS= 15 V) | Qgs | 1.9 | nC |
| Gate-Drain Charge (VGS = 4.5 V, ID=2.1A, VDS= 15 V) | Qgd | 1.6 | nC |
| Device Marking | Marking | 2E | - |
| Shipping | Shipping | 3000/Tape&Reel | - |
Notes:
- 1. Repetitive Rating: Pulse width limited by the Maximum junction temperature.
- 2. 1-in 2oz Cu PCB board.
- 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2404121426_LRC-LN2306ELT1G_C5273650.pdf
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