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quality Halogen Free PNP Silicon Surface Mount Transistor with Thermal Stress Absorbing Leads LRC S-LMUN5111T1G factory
quality Halogen Free PNP Silicon Surface Mount Transistor with Thermal Stress Absorbing Leads LRC S-LMUN5111T1G factory

Halogen Free PNP Silicon Surface Mount Transistor with Thermal Stress Absorbing Leads LRC S-LMUN5111T1G

Key Attributes
Model Number: S-LMUN5111T1G
Product Custom Attributes
Output Voltage(VO(on)):
200mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
S-LMUN5111T1G
Package:
SC-70
Product Description

Product Overview

The LMUN5111T1G and S-LMUN5111T1G are PNP Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These devices simplify circuit design, reduce board space, and lower component count. The SC-70/SOT-323 package is compatible with wave or reflow soldering, and the modified gull-winged leads absorb thermal stress to prevent die damage. The S-prefix variant is qualified for automotive and other applications with unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. The product material complies with RoHS requirements and is Halogen Free.

Product Attributes

  • Brand: Leshan Radio Company, LTD.
  • Material Compliance: RoHS, Halogen Free
  • Package Type: SC-70/SOT-323
  • Certifications: AEC-Q101 qualified (S-prefix variant)
  • PPAP Capable (S-prefix variant)

Technical Specifications

Parameter Symbol LMUN5111T1G / S-LMUN5111T1G Unit
Maximum Ratings (Ta = 25C)
CollectorBase Voltage VCBO -50 V
CollectorEmitter Voltage VCEO -50 V
Collector Current Continuous IC -100 mA
Total Device Dissipation, FR-5 Board PD 202 mW
Derate above 25C 1.6 mW/C
Thermal Resistance, Junction-to-Ambient (Note 1) RJA 618 C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 C
Electrical Characteristics (Ta= 25C)
CollectorEmitter Breakdown Voltage VBR(CEO) -50 V
CollectorBase Breakdown Voltage VBR(CBO) -50 V
Collector-Base Cutoff Current ICBO -100 nA
Collector-Emitter Cutoff Current ICEO -500 nA
Emitter-Base Cutoff Current IEBO -0.5 A
DC Current Gain HFE 250 (Min), 60 (Typ)
CollectorEmitter Saturation Voltage VCE(sat) -0.25 (Max) V
Output Voltage (on) (VCC = -5.0 V, VB = -2.5 V, RL =1.0K) VOH -0.2 (Max) V
Output Voltage (on) (VCC = -5.0 V, VB = -0.5 V, RL =1.0K) VOH -4.9 (Typ) V
Input Resistor R1 7, 10, 13 K
Resistor Ratio R1/R2 0.8, 1, 1.2
Device Marking
LMUN5111T1G 6A
Resistor Values
R1 (K) R2 (K)
10 10
Shipping
3000/Tape&Reel 10000/Tape&Reel
Outline and Dimensions (SC70)
Dimension Min Nor Max
A 0.80 0.95 1.00
A1 0.00 0.05 0.10
A2
b 0.30 0.35 0.40
c 0.10 0.15 0.25
D 1.80 2.05 2.20
E 1.15 1.30 1.35
He 2.00 2.10 2.40
e 1.20 1.30 1.40
e1
L 0.20 0.35 0.56
X 0.65
Y 0.70 0.90
Soldering Footprint (SC70)
DIM MIN
A 1.90
B 0.65
C 0.65

2410010101_LRC-S-LMUN5111T1G_C2932866.pdf

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