Surface Mount Device P Channel MOSFET LRC LP2307LT1G with High Density Cell and Low On Resistance
Product Overview
The LP2307LT1G and S-LP2307LT1G are P-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD. These devices utilize advanced trench process technology and a high-density cell design for ultra-low on-resistance. They are designed for applications requiring a small package outline and are available as Surface Mount Devices (SMD) in the SOT-23 (TO-236AB) package. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: LESHAN RADIO COMPANY, LTD.
- Package Type: SOT 23 (TO236AB)
- Technology: Advanced trench process technology, High Density Cell Design
- Mode: P-Channel Enhancement-Mode
- Certifications: AEC-Q101 Qualified and PPAP Capable (S-prefix variants)
Technical Specifications
| Model | VDS (V) | VGS (V) | ID @ TA=25 (A) | ID @ TA=70 (A) | IDM (A) | PD @ TA=25 (W) | PD @ TA=70 (W) | TSTG () | TJ () | Rthj-a (/W) | RDS(ON) @ Vgs=-4.5V, Ids=-4.7A (m) | RDS(ON) @ Vgs=-2.5V, Ids=-1.0A (m) | BVDSS (V) | VGS(th) (V) | gfs (S) | IDSS (uA) | IGSS (nA) | Qg (nC) | Qgs (nC) | Qgd (nC) | td(on) (ns) | td(off) (ns) | Ciss (pF) | Coss (pF) | Crss (pF) | IS (A) | VSD (V) | Device Marking | Ordering Information (Tape & Reel) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LP2307LT1G / S-LP2307LT1G | -16 | 8 | -1.1 | -0.7 | -4.7 | 0.7 | 0.4 | -55 to 150 | 150 | 110 | 70 | 110 | -16 | -1.4 | 8 | -1 | -100 | 24 | 18 | 2.7 | 22 | 45 | 985 | 180 | 160 | -1.7 | -0.85 | P07 | 3000/Tape&Reel (LP2307LT1G) |
| LP2307LT3G | -16 | 8 | -1.1 | -0.7 | -4.7 | 0.7 | 0.4 | -55 to 150 | 150 | 110 | 70 | 110 | -16 | -1.4 | 8 | -1 | -100 | 24 | 18 | 2.7 | 22 | 45 | 985 | 180 | 160 | -1.7 | -0.85 | P07 | 10000/Tape&Reel (LP2307LT3G) |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.7V, ID=-3.8A | - | 100 | - | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V, ID=-4.7A | - | 70 | - | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V, ID=-1.0A | - | 110 | - | m |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -16 | - | - | V |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=-250uA | -1.4 | - | - | V |
| gfs | Forward Transconductance | VDS=-10V, ID=-4.7A | - | 8 | - | S |
| IDSS | Drain-Source Leakage Current (Tj=25oC) | VDS=-16V, VGS=0V | - | - | -1 | uA |
| IGSS | Gate-Source Leakage | VGS=8V | - | - | -100 | nA |
| Qg | Total Gate Charge | ID=-4.7A | - | 24 | 36 | nC |
| Qgs | Gate-Source Charge | VDS=-10V | - | 18 | - | nC |
| Qgd | Gate-Drain ("Miller") Charge | VGS=-4.5V | - | 2.7 | - | nC |
| td(on) | Turn-on Delay Time | VDS=-10V | - | 22 | 35 | ns |
| td(off) | Turn-off Delay Time | RG=6 ,VGS=-4.5V | - | 45 | - | ns |
| Ciss | Input Capacitance | VGS=0V | - | 985 | 1580 | pF |
| Coss | Output Capacitance | VDS=-15V | - | 180 | - | pF |
| Crss | Reverse Transfer Capacitance | f=1.0MHz | - | 160 | - | pF |
| IS | Max Diode Forward Current | DS=0V | - | -1.7 | - | A |
| VSD | Diode Forward Voltage | IS=-1.7A, VGS=0V | - | -1.2 | - | V |
| Dimension | Min (inches) | Max (inches) | Min (mm) | Max (mm) |
|---|---|---|---|---|
| A | 0.1102 | 0.1197 | 2.80 | 3.04 |
| B | 0.0472 | 0.0551 | 1.20 | 1.40 |
| C | 0.0350 | 0.0440 | 0.89 | 1.11 |
| D | 0.0150 | 0.0200 | 0.37 | 0.50 |
| G | 0.0701 | 0.0807 | 1.78 | 2.04 |
| H | 0.0005 | 0.0040 | 0.013 | 0.100 |
| J | 0.0034 | 0.0070 | 0.085 | 0.177 |
| K | 0.0140 | 0.0285 | 0.35 | 0.69 |
| L | 0.0350 | 0.0401 | 0.89 | 1.02 |
| S | 0.0830 | 0.1039 | 2.10 | 2.64 |
| V | 0.0177 | 0.0236 | 0.45 | 0.60 |
1912111437_LRC-LP2307LT1G_C131733.pdf
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