Surface Mount Device P Channel MOSFET LRC LP2307LT1G with High Density Cell and Low On Resistance

Key Attributes
Model Number: LP2307LT1G
Product Custom Attributes
Drain To Source Voltage:
16V
Current - Continuous Drain(Id):
4.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
1.58nF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
-
Mfr. Part #:
LP2307LT1G
Package:
SOT-23
Product Description

Product Overview

The LP2307LT1G and S-LP2307LT1G are P-Channel Enhancement-Mode MOSFETs from LESHAN RADIO COMPANY, LTD. These devices utilize advanced trench process technology and a high-density cell design for ultra-low on-resistance. They are designed for applications requiring a small package outline and are available as Surface Mount Devices (SMD) in the SOT-23 (TO-236AB) package. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Package Type: SOT 23 (TO236AB)
  • Technology: Advanced trench process technology, High Density Cell Design
  • Mode: P-Channel Enhancement-Mode
  • Certifications: AEC-Q101 Qualified and PPAP Capable (S-prefix variants)

Technical Specifications

Model VDS (V) VGS (V) ID @ TA=25 (A) ID @ TA=70 (A) IDM (A) PD @ TA=25 (W) PD @ TA=70 (W) TSTG () TJ () Rthj-a (/W) RDS(ON) @ Vgs=-4.5V, Ids=-4.7A (m) RDS(ON) @ Vgs=-2.5V, Ids=-1.0A (m) BVDSS (V) VGS(th) (V) gfs (S) IDSS (uA) IGSS (nA) Qg (nC) Qgs (nC) Qgd (nC) td(on) (ns) td(off) (ns) Ciss (pF) Coss (pF) Crss (pF) IS (A) VSD (V) Device Marking Ordering Information (Tape & Reel)
LP2307LT1G / S-LP2307LT1G -16 8 -1.1 -0.7 -4.7 0.7 0.4 -55 to 150 150 110 70 110 -16 -1.4 8 -1 -100 24 18 2.7 22 45 985 180 160 -1.7 -0.85 P07 3000/Tape&Reel (LP2307LT1G)
LP2307LT3G -16 8 -1.1 -0.7 -4.7 0.7 0.4 -55 to 150 150 110 70 110 -16 -1.4 8 -1 -100 24 18 2.7 22 45 985 180 160 -1.7 -0.85 P07 10000/Tape&Reel (LP2307LT3G)
Symbol Parameter Test Conditions Min. Typ. Max. Units
RDS(ON) Static Drain-Source On-Resistance VGS=-2.7V, ID=-3.8A - 100 - m
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.7A - 70 - m
RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-1.0A - 110 - m
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -16 - - V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.4 - - V
gfs Forward Transconductance VDS=-10V, ID=-4.7A - 8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-16V, VGS=0V - - -1 uA
IGSS Gate-Source Leakage VGS=8V - - -100 nA
Qg Total Gate Charge ID=-4.7A - 24 36 nC
Qgs Gate-Source Charge VDS=-10V - 18 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2.7 - nC
td(on) Turn-on Delay Time VDS=-10V - 22 35 ns
td(off) Turn-off Delay Time RG=6 ,VGS=-4.5V - 45 - ns
Ciss Input Capacitance VGS=0V - 985 1580 pF
Coss Output Capacitance VDS=-15V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF
IS Max Diode Forward Current DS=0V - -1.7 - A
VSD Diode Forward Voltage IS=-1.7A, VGS=0V - -1.2 - V
Dimension Min (inches) Max (inches) Min (mm) Max (mm)
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

1912111437_LRC-LP2307LT1G_C131733.pdf

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