Low Threshold Voltage Power MOSFET LBSS139LT1G with 1500V ESD Protection and AEC Q101 Qualification
Key Attributes
Model Number:
LBSS139LT1G
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.6Ω@2.75V,200mA
Gate Threshold Voltage (Vgs(th)):
1.5V@1.0mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
22.8pF@25V
Pd - Power Dissipation:
225mW
Mfr. Part #:
LBSS139LT1G
Package:
SOT-23
Product Description
Product Overview
The LBSS139LT1G and S-LBSS139LT1G are N-Channel Power MOSFETs designed for low voltage applications. These devices feature a low threshold voltage (VGS(th): 0.5V to 1.5V) and ESD protection up to 1500V. The S-prefix variants are qualified for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability. They are RoHS compliant and Halogen Free.
Product Attributes
- Compliance: RoHS, Halogen Free
- Automotive Qualification: AEC-Q101 qualified (S-prefix variants)
- PPAP Capable: Yes (S-prefix variants)
- ESD Protection: 1500V
Technical Specifications
| Model | Device Marking | Shipping | Description | VDS (Vdc) | ID (mAdc) | IDM (mAmps) | VGS(th) (V) | RDS(on) (Ohms) | VBRDSS (Vdc) | IDSS (Adc) | IGSSF (Adc) | IGSSR (Adc) | Ciss (pF) | Coss (pF) | Crss (pF) | td(on) (ns) | td(off) (ns) | PD (mW) | RJA (C/W) | TJ,Tstg (C) | TL (C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LBSS139LT1G | J2 | 3000/Tape&Reel | Power MOSFET | 50 | 200 | 800 | 0.5 to 1.5 | - | 50 | - | 5.6 | -10 | 22.8 | 3.5 | 2.9 | - | - | 225 | 556 | -55 to +150 | 260 |
| S-LBSS139LT1G | J2 | 3000/Tape&Reel | Power MOSFET | 50 | 200 | 800 | 0.5 to 1.5 | - | 50 | - | 5.6 | -10 | 22.8 | 3.5 | 2.9 | - | - | 225 | 556 | -55 to +150 | 260 |
| LBSS139LT3G | - | 10000/Tape&Reel | Power MOSFET | 50 | 200 | 800 | 0.5 to 1.5 | - | 50 | - | 5.6 | -10 | 22.8 | 3.5 | 2.9 | - | - | 225 | 556 | -55 to +150 | 260 |
| Continuous Drain Current (ID) @ TA = 25C: 200 mAmps | |||||||||||||||||||||
| Pulsed Drain Current (IDM) (tp10s): 800 mAmps | |||||||||||||||||||||
| Gate-to-Source Voltage (VGS) Continuous: 20 Vdc | |||||||||||||||||||||
| Total Device Dissipation (PD) @ TA = 25C: 225 mW | |||||||||||||||||||||
| Derate above 25C: 1.8 mW/C | |||||||||||||||||||||
| Thermal Resistance, JunctiontoAmbient (RJA) (Note 1): 556 C/W | |||||||||||||||||||||
| Junction and Storage Temperature (TJ,Tstg): -55 to +150 C | |||||||||||||||||||||
| Maximum Lead Temperature for Soldering Purposes, for 10 seconds (TL): 260 C | |||||||||||||||||||||
| Drain-Source Breakdown Voltage (VBRDSS) (VGS = 0, ID = 250Adc): 50 Vdc | |||||||||||||||||||||
| Zero Gate Voltage Drain Current (IDSS) (VGS = 0, VDS = 25 Vdc): 1 Adc | |||||||||||||||||||||
| Zero Gate Voltage Drain Current (IDSS) (VGS = 0, VDS = 50 Vdc): 10 Adc | |||||||||||||||||||||
| GateBody Leakage Current, Forward (IGSSF) (VGS = 20 Vdc): 10 Adc | |||||||||||||||||||||
| GateBody Leakage Current, Reverse (IGSSR) (VGS = - 20 Vdc): -10 Adc | |||||||||||||||||||||
| Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 1.0mAdc): 0.5 to 1.5 Vdc | |||||||||||||||||||||
| Static DrainSource OnState Resistance (RDS(on)) (VGS = 4.5 Vdc, ID = 200 mAdc): 1.2 Ohms (Typ. @ 25C) | |||||||||||||||||||||
| Static DrainSource OnState Resistance (RDS(on)) (VGS = 10 Vdc, ID = 200 mAdc): 0.5 Ohms (Typ. @ 25C) | |||||||||||||||||||||
| Forward Transconductance (gfs) (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz): 100 mS (Typ.) | |||||||||||||||||||||
| Input Capacitance (Ciss) (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz): 22.8 pF (Typ.) | |||||||||||||||||||||
| Output Capacitance (Coss) (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz): 3.5 pF (Typ.) | |||||||||||||||||||||
| Reverse Transfer Capacitance (Crss) (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz): 2.9 pF (Typ.) | |||||||||||||||||||||
| Turn-On Delay Time (td(on)): 19 ns (Typ.) | |||||||||||||||||||||
| Turn-Off Delay Time (td(off)): 3.8 ns (Typ.) | |||||||||||||||||||||
Note 1: FR4 = 1.00.750.062 in.
Note 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
1912111437_LRC-LBSS139LT1G_C383203.pdf
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