High power IGBT inverter module 650V 400A luxin-semi LGM400HF65S4T1A ideal for UPS systems and welding machines
Key Attributes
Model Number:
LGM400HF65S4T1A
Product Custom Attributes
Pd - Power Dissipation:
1.154kW
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
0.81nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.8V@1.5mA
Operating Temperature:
-40℃~+150℃
Pulsed Current- Forward(Ifm):
800A
Switching Energy(Eoff):
26.8mJ
Turn-On Energy (Eon):
20.55mJ
Mfr. Part #:
LGM400HF65S4T1A
Package:
Screw Terminals
Product Description
Product Overview
The LGM400HF65S4T1A is a 650V/400A IGBT module designed for high-power applications. It features a positive temperature coefficient for VCEsat, low switching losses, and a low inductance case. The module utilizes an isolated copper baseplate with DBC technology for efficient thermal management. It is ideal for use in welding machines, UPS systems, and motor drives.
Product Attributes
- Brand: LU-Semi
- Model: LGM400HF65S4T1A
- Voltage Rating: 650V
- Current Rating: 400A
- Type: IGBT, Inverter
- Package: 2 in one-package
Technical Specifications
| Parameter | Conditions | Symbol | Values | Units |
| IGBT, Inverter Maximum Rated Values | VCES | 650 | V | |
| IC nom (Tc = 70C, Tvj max = 175C) | IC | 400 | A | |
| ICRM (tP = 1 ms) | ICRM | 800 | A | |
| Ptot (TC = 25C, Tvj max = 175C) | Ptot | 1154 | W | |
| VGE peak | VCES | 20 | V | |
| IGBT, Inverter Characteristic Values | VCEsat (IC = 400A, VGE = 15 V, Tvj = 25C) | VCEsat | 1.55 | V |
| VGEth (IC = 1.5 mA, VCE = VGE, Tvj = 25C) | VGEth | 5.8 | V | |
| QG (VGE = -15 / 15 V) | QG | 4.2 | C | |
| Cies (f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V) | Cies | 24 | nF | |
| Cres | 0.81 | nF | ||
| ICES (VCE = 1200 V, VGE = 0 V, Tvj = 25C) | ICES | 1.0 | mA | |
| IGES (VCE = 0 V, VGE = 20 V, Tvj = 25C) | IGES | 400 | nA | |
| td on (IC = 400A, VCE = 300 V, VGE = -15 / 15 V, RG = 22) | td on | 0.58 | s | |
| tr | 0.35 | s | ||
| td off | 1.17 | s | ||
| tf | 0.13 | s | ||
| Eon (per pulse) | 20.55 | mJ | ||
| Eoff (per pulse) | 26.8 | mJ | ||
| RthJC (per IGBT) | 0.13 | K/W | ||
| RthCH (per IGBT) | 0.03 | K/W | ||
| Tvj op | -40 to 150 | C | ||
| Diode, Inverter Maximum Rated Values | VRRM | 650 | V | |
| IF nom | 400 | A | ||
| IFRM (tP = 1 ms) | IFRM | 800 | A | |
| VF (IF = 400 A, VGE = 0 V, Tvj = 25C) | VF | 1.76 | V | |
| Diode, Inverter Characteristic Values | IRR (IF = 400 A, VR = 300 V, VGE = -15 V, RG = 22, Tvj = 25C) | IRR | 107 | A |
| QRR | 7 | C | ||
| Erec | 1.01 | mJ | ||
| RthJC (per diode) | 0.2 | K/W | ||
| RthCH (per diode) | 0.06 | K/W | ||
| Tvj op | -40 to 150 | C | ||
| Module Maximum Rated Values | VISOL (RMS, f = 50 Hz, t = 1 min.) | VISOL | 2.5 | kV |
| Creepage distance (terminal to heatsink) | 29 | mm | ||
| Clearance (terminal to heatsink) | 23 | mm | ||
| CTI | 400 | |||
| LsCE | 20 | nH | ||
| RCC'+EE (TC = 25C, per switch) | 0.7 | m | ||
| Storage temperature | Tstg | -40 to 125 | C | |
| Mounting force per clamp | F | 3 to 6 | N | |
| Weight | G | 345 | g |
2410121317_luxin-semi-LGM400HF65S4T1A_C4153752.pdf
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